发明申请
US20120091451A1 Zinc Oxide Nanostructures and Sensors Using Zinc Oxide Nanostructures
有权
氧化锌纳米结构和传感器使用氧化锌纳米结构
- 专利标题: Zinc Oxide Nanostructures and Sensors Using Zinc Oxide Nanostructures
- 专利标题(中): 氧化锌纳米结构和传感器使用氧化锌纳米结构
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申请号: US13264225申请日: 2010-04-14
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公开(公告)号: US20120091451A1公开(公告)日: 2012-04-19
- 发明人: John Vedamuthu Kennedy , Richard John Futter , Fang Fang , Andreas Markwitz
- 申请人: John Vedamuthu Kennedy , Richard John Futter , Fang Fang , Andreas Markwitz
- 优先权: NZ576207 20090414
- 国际申请: PCT/NZ2010/000068 WO 20100414
- 主分类号: H01L29/12
- IPC分类号: H01L29/12 ; B05D5/12 ; H05H1/48 ; C23C16/513 ; B82Y40/00 ; B82Y15/00
摘要:
A method for preparing zinc oxide nanostructures using arc discharge is disclosed. The method comprises the provision of an anode and a cathode in an arc discharge chamber. Current is supplied to the anode and the cathode to establish an arc discharge between the cathode and the anode to vaporise the anode and produce zinc oxide nanostructures. Contemplated is the use of the zinc oxide nanostructures to produce components that have applications in, for example, optoelectronics, energy storage devices, field emission devices, and sensors such as UV photosensors, gas sensors and humidity sensors. Disclosed is a gas sensor and method for its production, where said method comprises the provision of a sensor substrate comprising a conducting thin film at least partially covering at least two regions on at least one surface of a sensor substrate material to define a gap in the conducting thin film, the application of a mixture of zinc oxide nanostructures and a non-ionic polymer to at least a portion of the gap i the conducting thin film to thereby bridge the gap. Optionally contemplated is a step of annealing the mixture of zinc oxide nanostructures and non-ionic polymer applied to said sensor substrate to produce the sensor component.
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