-
1.发明申请公开(公告)号：US20120091451A1
公开(公告)日：2012-04-19
申请号：US13264225
申请日：2010-04-14
CPC分类号： C01G9/03 , B82Y30/00 , C01P2002/54 , C01P2002/72 , C01P2002/76 , C01P2004/03 , C01P2004/16 , C01P2004/54 , C01P2006/40 , C01P2006/60 , C04B35/453 , C04B35/62231 , C04B35/6268 , C04B2235/3279 , C04B2235/3284 , C04B2235/526 , C04B2235/5264 , G01N33/0027
摘要： A method for preparing zinc oxide nanostructures using arc discharge is disclosed. The method comprises the provision of an anode and a cathode in an arc discharge chamber. Current is supplied to the anode and the cathode to establish an arc discharge between the cathode and the anode to vaporise the anode and produce zinc oxide nanostructures. Contemplated is the use of the zinc oxide nanostructures to produce components that have applications in, for example, optoelectronics, energy storage devices, field emission devices, and sensors such as UV photosensors, gas sensors and humidity sensors. Disclosed is a gas sensor and method for its production, where said method comprises the provision of a sensor substrate comprising a conducting thin film at least partially covering at least two regions on at least one surface of a sensor substrate material to define a gap in the conducting thin film, the application of a mixture of zinc oxide nanostructures and a non-ionic polymer to at least a portion of the gap i the conducting thin film to thereby bridge the gap. Optionally contemplated is a step of annealing the mixture of zinc oxide nanostructures and non-ionic polymer applied to said sensor substrate to produce the sensor component.
摘要翻译： 公开了一种使用电弧放电制备氧化锌纳米结构的方法。 该方法包括在电弧放电室中提供阳极和阴极。 电流被提供给阳极和阴极，以在阴极和阳极之间建立电弧放电，以蒸发阳极并产生氧化锌纳米结构。 考虑使用氧化锌纳米结构来生产在例如光电子学，能量存储器件，场致发射器件以及诸如UV光电传感器，气体传感器和湿度传感器的传感器中应用的部件。 公开了一种用于其生产的气体传感器和方法，其中所述方法包括提供传感器基底，其包括导电薄膜，至少部分地覆盖传感器基底材料的至少一个表面上的至少两个区域，以在 导电薄膜，将氧化锌纳米结构和非离子聚合物的混合物施加到导电薄膜的间隙i的至少一部分，从而桥接间隙。 可以预期的是退火施加到所述传感器基底上的氧化锌纳米结构和非离子聚合物的混合物以产生传感器部件的步骤。
-
2.发明授权公开(公告)号：US09309128B2
公开(公告)日：2016-04-12
申请号：US13264225
申请日：2010-04-14
IPC分类号： C01G9/03 , B82Y30/00 , C04B35/453 , C04B35/622 , C04B35/626 , G01N33/00
CPC分类号： C01G9/03 , B82Y30/00 , C01P2002/54 , C01P2002/72 , C01P2002/76 , C01P2004/03 , C01P2004/16 , C01P2004/54 , C01P2006/40 , C01P2006/60 , C04B35/453 , C04B35/62231 , C04B35/6268 , C04B2235/3279 , C04B2235/3284 , C04B2235/526 , C04B2235/5264 , G01N33/0027
摘要： A method for preparing zinc oxide nanostructures using arc discharge is disclosed. The method comprises the provision of an anode and a cathode in an arc discharge chamber. Current is supplied to the anode and the cathode to establish an arc discharge between the cathode and the anode to vaporize the anode and produce zinc oxide nanostructures. Contemplated is the use of the zinc oxide nanostructures to produce components that have applications in, for example, optoelectronics, energy storage devices, field emission devices, and sensors such as UV photosensors, gas sensors and humidity sensors. Disclosed is a gas sensor and method for its production, where said method comprises the provision of a sensor substrate comprising a conducting thin film at least partially covering at least two regions on at least one surface of a sensor substrate material to define a gap in the conducting thin film, the application of a mixture of zinc oxide nanostructures and a non-ionic polymer to at least a portion of the gap in the conducting thin film to thereby bridge the gap. Optionally contemplated is a step of annealing the mixture of zinc oxide nanostructures and non-ionic polymer applied to said sensor substrate to produce the sensor component.
摘要翻译： 公开了一种使用电弧放电制备氧化锌纳米结构的方法。 该方法包括在电弧放电室中提供阳极和阴极。 电流被提供给阳极和阴极，以在阴极和阳极之间建立电弧放电，以蒸发阳极并产生氧化锌纳米结构。 考虑使用氧化锌纳米结构来生产在例如光电子学，能量存储器件，场致发射器件以及诸如UV光电传感器，气体传感器和湿度传感器的传感器中应用的部件。 公开了一种用于其生产的气体传感器和方法，其中所述方法包括提供传感器基底，其包括导电薄膜，至少部分地覆盖传感器基底材料的至少一个表面上的至少两个区域，以在 导电薄膜，将氧化锌纳米结构和非离子聚合物的混合物施加到导电薄膜中的间隙的至少一部分，从而桥接间隙。 可以预期的是退火施加到所述传感器基底上的氧化锌纳米结构和非离子聚合物的混合物以产生传感器部件的步骤。
-
公开(公告)号：US20130147586A1
公开(公告)日：2013-06-13
申请号：US13700305
申请日：2011-05-27
CPC分类号： C23C14/14 , B82Y25/00 , B82Y40/00 , C23C14/18 , C23C14/48 , C23C14/582 , H01F1/0036 , H01F1/0063 , H01F10/007 , H01F10/10 , H01F41/16
摘要： A method for preparing magnetic materials is disclosed. The magnetic materials are prepared by implanting low energy magnetic ions into a substrate and annealing with a charged particle beam. Magnetic materials comprising magnetic nanoclusters in the near-surface region of a substrate are also disclosed. The magnetic materials are useful in, for example, magneto-electronic devices such as magnetic sensors.
摘要翻译： 公开了制备磁性材料的方法。 磁性材料通过将低能磁离子注入衬底并用带电粒子束进行退火来制备。 还公开了在基板的近表面区域中包含磁性纳米团簇的磁性材料。 磁性材料可用于例如磁电子器件如磁性传感器。
-
公开(公告)号：US20090203166A1
公开(公告)日：2009-08-13
申请号：US12296326
申请日：2007-04-05
IPC分类号： H01L21/425
CPC分类号： C01G9/02 , H01L21/425 , H01L33/0087
摘要： A method for preparing p-type zinc oxide (ZnO) is described. The p-type ZnO is prepared by implanting low energy acceptor ions into an n-type ZnO substrate and annealing. In an alternative embodiment, the n-type ZnO substrate is pre-doped by implanting low energy donor ions. The p-type ZnO may have application in various optoelectronic devices, and a p-n junction formed from the p-type ZnO prepared as described above and a bulk n-type ZnO substrate is also described.
摘要翻译： 描述了制备p型氧化锌（ZnO）的方法。 通过将低能量受主离子注入n型ZnO衬底和退火来制备p型ZnO。 在替代实施例中，n型ZnO衬底通过注入低能量供体离子进行预掺杂。 p型ZnO可以应用于各种光电子器件，并且还描述了由如上所述制备的p型ZnO和体n型ZnO衬底形成的p-n结。
-
公开(公告)号：US08872615B2
公开(公告)日：2014-10-28
申请号：US13700305
申请日：2011-05-27
IPC分类号： H01L43/00 , B82Y25/00 , H01F10/00 , H01F41/16 , C23C14/14 , C23C14/58 , H01F10/10 , H01F1/00 , C23C14/48 , B82Y40/00
CPC分类号： C23C14/14 , B82Y25/00 , B82Y40/00 , C23C14/18 , C23C14/48 , C23C14/582 , H01F1/0036 , H01F1/0063 , H01F10/007 , H01F10/10 , H01F41/16
摘要： A method for preparing magnetic materials is disclosed. The magnetic materials are prepared by implanting low energy magnetic ions into a substrate and annealing with a charged particle beam. Magnetic materials comprising magnetic nanoclusters in the near-surface region of a substrate are also disclosed. The magnetic materials are useful in, for example, magneto-electronic devices such as magnetic sensors.
摘要翻译： 公开了制备磁性材料的方法。 磁性材料通过将低能磁离子注入衬底并用带电粒子束进行退火来制备。 还公开了在基板的近表面区域中包含磁性纳米团簇的磁性材料。 磁性材料可用于例如磁电子器件如磁性传感器。
-
公开(公告)号：US20150090898A1
公开(公告)日：2015-04-02
申请号：US14236581
申请日：2012-08-03
IPC分类号： H01J37/08 , H01J37/317
CPC分类号： H01J37/08 , C23C14/046 , C23C14/48 , C23C14/562 , H01J3/04 , H01J27/14 , H01J37/3171 , H01J2237/002 , H01J2237/061
摘要： The invention provides an ion source comprising first and second cathode pole pieces spaced apart from one another to form a cavity therebetween, an edge of the first cathode pole piece being spaced apart from an edge of the second cathode pole piece to define an elongate cathode gap between the respective edges of the pole pieces, the elongate cathode gap having a longitudinal axis; at least one magnet arranged for magnetising the first and second cathode pole pieces with opposite magnetic polarities; an elongate anode located in the cavity, the anode being spaced apart from the first and second cathode pole pieces and having a longitudinal axis, the longitudinal axis of the elongate anode and the longitudinal axis of the elongate cathode gap substantially coplanar; a first electrical connection which extends from outside the cavity to the anode; and a gas feed conduit which extends from outside the cavity to inside the cavity for introducing a gas into the cavity.
摘要翻译： 本发明提供了一种离子源，其包括彼此间隔开以在其间形成空腔的第一和第二阴极极片，第一阴极极片的边缘与第二阴极极片的边缘间隔开以限定细长的阴极间隙 在极片的相应边缘之间，细长阴极间隙具有纵向轴线; 至少一个磁体布置成用于以相反的磁极性磁化所述第一和第二阴极极片; 位于空腔中的细长阳极，阳极与第一和第二阴极极片间隔开并且具有纵向轴线，细长阳极的纵向轴线和细长阴极间隙的纵向轴线基本上共面; 从空腔外部延伸到阳极的第一电连接; 以及从空腔外部延伸到腔体内部的气体供给导管，用于将气体引入空腔。
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.019 秒)
