发明申请
- 专利标题: SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF
- 专利标题(中): 半导体发光元件及其生产工艺
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申请号: US13335984申请日: 2011-12-23
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公开(公告)号: US20120091499A1公开(公告)日: 2012-04-19
- 发明人: Ryota Kitagawa , Koji Asakawa , Akira Fujimoto , Tsutomu Nakanishi , Eishi Tsutsumi
- 申请人: Ryota Kitagawa , Koji Asakawa , Akira Fujimoto , Tsutomu Nakanishi , Eishi Tsutsumi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-77421 20080325
- 主分类号: H01L33/62
- IPC分类号: H01L33/62
摘要:
The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
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