Displaying device and lighting device employing organic electroluminescence element
    1.
    发明授权
    Displaying device and lighting device employing organic electroluminescence element 有权
    使用有机电致发光元件的显示装置和照明装置

    公开(公告)号:US07928353B2

    公开(公告)日:2011-04-19

    申请号:US12392691

    申请日:2009-02-25

    IPC分类号: H01J1/46

    摘要: The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.

    摘要翻译: 本发明提供一种高效率的有机EL显示器和照明装置。 有机EL显示器包括基板,像素驱动电路单元和在基板上以矩阵形式布置的像素。 像素包括发光部分,并且发光部分由放置在基板附近的第一电极,远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。 第二电极具有厚度为10nm至200nm的金属电极层,并且金属电极层包括金属部分和贯穿该层的多个开口。 金属部件是无缝的,并且由连续连接的金属形成,其中任何点之间没有断裂。 开口的平均开口直径为10nm〜780nm,并且周期性地布置,使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。

    Semiconductor light-emitting element and process for production thereof
    2.
    发明授权
    Semiconductor light-emitting element and process for production thereof 失效
    半导体发光元件及其制造方法

    公开(公告)号:US08450768B2

    公开(公告)日:2013-05-28

    申请号:US13335984

    申请日:2011-12-23

    IPC分类号: H01L33/00

    CPC分类号: H01L33/38 H01L2933/0091

    摘要: The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

    摘要翻译: 本发明提供一种半导体发光元件,其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的,使得零件中的任何一个点位置连续地连接而不断裂,并且整个区域的95%或更多的金属部分在直线上不间断地继续直线而不断裂,直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm,与半导体层良好的欧姆接触。

    Light transmission type solar cell and method for producing the same
    3.
    发明授权
    Light transmission type solar cell and method for producing the same 有权
    透光型太阳能电池及其制造方法

    公开(公告)号:US09136405B2

    公开(公告)日:2015-09-15

    申请号:US12700063

    申请日:2010-02-04

    摘要: The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm2 to 0.8 μm2, and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.

    摘要翻译: 本发明提供一种发光效率和光透射性优异的透光型太阳能电池,并且还提供一种太阳能电池的制造方法。 本发明的太阳能电池包括光电转换层,光入射侧电极层和对电极层。 入射侧电极层设置有穿过层的多个开口,并且具有10nm至200nm的厚度。 每个开口占据80nm 2至0.8μm2的面积,并且开口率在10%至66%的范围内。 在700nm波长下,全细胞的透射率为5%以上。 入射侧电极层可以通过用压模进行蚀刻制造来形成。 在蚀刻制造中,可以使用通过自组装嵌段共聚物形成的细颗粒的单粒子层或点图案作为掩模。

    SOLAR CELL
    4.
    发明申请
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号:US20130092219A1

    公开(公告)日:2013-04-18

    申请号:US13619360

    申请日:2012-09-14

    IPC分类号: H01L31/0224

    摘要: The present invention provides a solar cell comprising a laminate of a photoelectric conversion layer, a metal porous membrane and a refractive index adjusting layer. The metal porous membrane is positioned on the light-incident side, is directly in contact with the photoelectric conversion layer, and has plural openings bored though the membrane. The refractive index adjusting layer covers at least a part of the surface of the metal porous membrane and of the inner surfaces of the openings, and has a refractive index of 1.35 to 4.2 inclusive. If adopting a nano-fabricated metal membrane as an electrode, the present invention enables to provide a solar cell capable of realizing efficient photoelectric conversion by use of electric field-enhancement effect.

    摘要翻译: 本发明提供一种太阳能电池,其包括光电转换层,金属多孔膜和折射率调节层的层压体。 金属多孔膜位于光入射侧,与光电转换层直接接触,并且具有通过膜而钻出的多个开口。 折射率调节层覆盖金属多孔膜的表面和开口的内表面的至少一部分,折射率为1.35〜4.2。 如果采用纳米制造的金属膜作为电极,则本发明能够提供能够通过使用电场增强效果实现有效的光电转换的太阳能电池。

    SOLAR CELL EQUIPPED WITH ELECTRODE HAVING MESH STRUCTURE, AND PROCESS FOR MANUFACTURING SAME
    5.
    发明申请
    SOLAR CELL EQUIPPED WITH ELECTRODE HAVING MESH STRUCTURE, AND PROCESS FOR MANUFACTURING SAME 审中-公开
    具有电极结构的电极的太阳能电池及其制造方法

    公开(公告)号:US20120042946A1

    公开(公告)日:2012-02-23

    申请号:US13216977

    申请日:2011-08-24

    IPC分类号: H01L31/0224 H01L31/18

    摘要: The embodiment provides a solar cell and a manufacturing process thereof. The solar cell is equipped with an electrode on the light incident surface side; and the electrode has both low resistivity and high transparency, can efficiently utilize solar light for excitation of carriers, and can be made of inexpensive materials. The solar cell comprises a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and has plural penetrating openings. Each of the individual openings occupies an area in the range of 80 nm2 to 0.8 μm2, and the aperture ratio thereof is in the range 10 to 66%. The first electrode layer in the cell can be produced by etching procedure using an etching mask obtained by use of a single particle layer of fine particles, by use of a dot pattern formed by self-assembly of a block copolymer, or by use of a stamper.

    摘要翻译: 本实施例提供一种太阳能电池及其制造方法。 太阳能电池在光入射面侧配备有电极; 并且电极具有低电阻率和高透明度,可以有效地利用太阳光用于载流子的激发,并且可以由廉价的材料制成。 太阳能电池包括光电转换层,布置在光入射表面侧的第一电极层和与第一电极层相对布置的第二电极层。 第一电极层的厚度为10〜200nm,具有多个贯通孔。 每个单独的开口占据在80nm 2至0.8μm2范围内的面积,并且其开口率在10至66%的范围内。 电池中的第一电极层可以通过使用通过使用单颗粒细小颗粒层获得的蚀刻掩模,通过使用通过嵌段共聚物的自组装形成的点图案或通过使用 压模。

    Semiconductor light-emitting element and process for production thereof
    6.
    发明授权
    Semiconductor light-emitting element and process for production thereof 有权
    半导体发光元件及其制造方法

    公开(公告)号:US08101964B2

    公开(公告)日:2012-01-24

    申请号:US12363198

    申请日:2009-01-30

    IPC分类号: H01L30/00

    CPC分类号: H01L33/38 H01L2933/0091

    摘要: The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

    摘要翻译: 本发明提供一种半导体发光元件,其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的,使得零件中的任何一个点位置连续连接而不断裂,并且整个区域的95%或更多的金属部分线性地继续而不断开,直线距离不大于 从有源层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm,与半导体层良好的欧姆接触。

    LIGHT TRANSMISSION TYPE SOLAR CELL AND METHOD FOR PRODUCING THE SAME
    7.
    发明申请
    LIGHT TRANSMISSION TYPE SOLAR CELL AND METHOD FOR PRODUCING THE SAME 有权
    光传输型太阳能电池及其制造方法

    公开(公告)号:US20100236619A1

    公开(公告)日:2010-09-23

    申请号:US12700063

    申请日:2010-02-04

    IPC分类号: H01L31/00 H01L31/18

    摘要: The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm2 to 0.8 μm2, and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.

    摘要翻译: 本发明提供一种发光效率和光透射性优异的透光型太阳能电池,并且还提供一种太阳能电池的制造方法。 本发明的太阳能电池包括光电转换层,光入射侧电极层和对电极层。 入射侧电极层设置有穿过层的多个开口,并且具有10nm至200nm的厚度。 每个开口占据80nm 2至0.8μm2的面积,并且开口率在10%至66%的范围内。 在700nm波长下,全细胞的透射率为5%以上。 入射侧电极层可以通过用压模进行蚀刻制造来形成。 在蚀刻制造中,可以使用通过自组装嵌段共聚物形成的细颗粒的单粒子层或点图案作为掩模。

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF
    8.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF 有权
    半导体发光元件及其生产工艺

    公开(公告)号:US20090242925A1

    公开(公告)日:2009-10-01

    申请号:US12363198

    申请日:2009-01-30

    IPC分类号: H01L33/00

    CPC分类号: H01L33/38 H01L2933/0091

    摘要: The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

    摘要翻译: 本发明提供一种半导体发光元件,其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的,使得零件中的任何一个点位置连续地连接而不断裂,并且整个区域的95%以上的金属部分直线地继续而不断开,直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm,与半导体层良好的欧姆接触。

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF
    9.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF 失效
    半导体发光元件及其生产工艺

    公开(公告)号:US20120091499A1

    公开(公告)日:2012-04-19

    申请号:US13335984

    申请日:2011-12-23

    IPC分类号: H01L33/62

    CPC分类号: H01L33/38 H01L2933/0091

    摘要: The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

    摘要翻译: 本发明提供一种半导体发光元件,其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的,使得零件中的任何一个点位置连续连接而不断裂,并且整个区域的95%或更多的金属部分线性地继续而不断开,直线距离不大于 从有源层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm,与半导体层良好的欧姆接触。

    THIN FILM SOLAR CELL AND METHOD FOR PRODUCING THE SAME
    10.
    发明申请
    THIN FILM SOLAR CELL AND METHOD FOR PRODUCING THE SAME 审中-公开
    薄膜太阳能电池及其制造方法

    公开(公告)号:US20100236620A1

    公开(公告)日:2010-09-23

    申请号:US12706338

    申请日:2010-02-16

    IPC分类号: H01L31/0236 H01L31/18

    摘要: According to one aspect of the present invention, there is provided a thin film solar cell comprising a substrate, a photoelectric conversion layer formed on said substrate, said photoelectric conversion layer having a thickness of 1 μm or less, and said photoelectric conversion layer comprising a p-type semiconductor layer, an n-type semiconductor layer, and are i-type semiconductor layer placed between said p-type semiconductor layer and said n-type semiconductor layer, a light-incident side electrode layer formed on a light-incident surface of said photoelectric conversion layer and a counter electrode layer formed on the surface opposite to the light-incident surface. Said light-incident side electrode layer has plural openings bored though said layer, and the thickness thereof is in the range of 10 nm to 200 nm. Each of said openings occupies an area of 80 nm2 to 0.8 μm2. The opening ratio is in the range of 10% to 66%.

    摘要翻译: 根据本发明的一个方面,提供了一种薄膜太阳能电池,其包括基板,形成在所述基板上的光电转换层,所述光电转换层的厚度为1μm以下,所述光电转换层包括 p型半导体层,n型半导体层,并且是位于所述p型半导体层和所述n型半导体层之间的i型半导体层,形成在光入射表面上的光入射侧电极层 的所述光电转换层和形成在与所述光入射表面相对的表面上的对电极层。 所述光入射侧电极层具有贯穿所述层的多个开口,其厚度在10nm至200nm的范围内。 每个所述开口占据80nm 2至0.8μm2的面积。 开口率在10%至66%的范围内。