发明申请
US20120104412A1 HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING
有权
通过表面粗化的高光提取效率的基于氮化物的发光二极管
- 专利标题： HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING
- 专利标题（中）： 通过表面粗化的高光提取效率的基于氮化物的发光二极管
-
申请号： US13349342申请日： 2012-01-12
-
公开(公告)号： US20120104412A1公开(公告)日： 2012-05-03
- 发明人: Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L33/32
- IPC分类号： H01L33/32 ; H01L33/58
摘要：
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
公开/授权文献
信息查询
IPC分类:
