Invention Application
US20120121891A1 3-DIMENSIONAL NANOSTRUCTURE HAVING NANOMATERIALS STACKED ON GRAPHENE SUBSTRATE AND FABRICATION METHOD THEREOF
有权
具有堆积在石墨基板上的纳米材料的三维纳米结构及其制造方法
- Patent Title: 3-DIMENSIONAL NANOSTRUCTURE HAVING NANOMATERIALS STACKED ON GRAPHENE SUBSTRATE AND FABRICATION METHOD THEREOF
- Patent Title (中): 具有堆积在石墨基板上的纳米材料的三维纳米结构及其制造方法
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Application No.: US13322385Application Date: 2010-09-20
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Publication No.: US20120121891A1Publication Date: 2012-05-17
- Inventor: Sang Ouk Kim , Won Jong Lee , Duck Hyun Lee , Tae Hee Han , Ji Eun Kim , Jin Ah Lee , Keon Jae Lee
- Applicant: Sang Ouk Kim , Won Jong Lee , Duck Hyun Lee , Tae Hee Han , Ji Eun Kim , Jin Ah Lee , Keon Jae Lee
- Priority: KR10-2009-0090634 20090924
- International Application: PCT/KR10/06461 WO 20100920
- Main IPC: B32B5/16
- IPC: B32B5/16 ; C23C16/50 ; B05D5/12 ; B05D5/00 ; C23C16/26 ; B82Y99/00 ; B82Y40/00 ; B82Y30/00

Abstract:
The present invention relates to a 3-dimensional nanostructure having nanomaterials stacked on a graphene substrate; and more specifically, to a 3-dimensional nanostructure having at least one nanomaterial selected from nanotubes, nanowires, nanorods, nanoneedles and nanoparticles grown on a reduced graphene substrate. The present invention enables the achievement of a synergy effect of the 3-dimensional nanostructure hybridizing 1-dimensional nanomaterials and 2-dimensional graphene. The nanostructure according to the present invention is excellent in flexibility and elasticity, and can easily be transferred to any substrate having a non-planar surface. Also, all junctions in nanomaterials, a metal catalyst and a graphene film system form the ohmic electrical contact, which allows the nanostructure to easily be incorporated into a field-emitting device.
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