发明申请
US20120129084A1 PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
有权
光电隔离器及其制造方法，以及光电二极管生产方法和半导体器件生产方法
- 专利标题： PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
- 专利标题（中）： 光电隔离器及其制造方法，以及光电二极管生产方法和半导体器件生产方法
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申请号： US13347425申请日： 2012-01-10
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公开(公告)号： US20120129084A1公开(公告)日： 2012-05-24
- 发明人: Takeyuki Yamada , Atsushi Kominato , Hiroyuki Iwashita , Masahiro Hashimoto , Yasushi Okubo
- 申请人： Takeyuki Yamada , Atsushi Kominato , Hiroyuki Iwashita , Masahiro Hashimoto , Yasushi Okubo
- 申请人地址： JP Tokyo
- 专利权人： HOYA CORPORATION
- 当前专利权人： HOYA CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2005-261667 20050909; JP2005-274750 20050921; JP2005-286165 20050930
- 主分类号： G03F1/50
- IPC分类号： G03F1/50
摘要：
A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
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