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1.发明申请PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD 有权光电隔离器及其制造方法，以及光电二极管生产方法和半导体器件生产方法公开(公告)号：US20120129084A1
公开(公告)日：2012-05-24
申请号：US13347425
申请日：2012-01-10
IPC分类号： G03F1/50
摘要： A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚。 光掩模坯料通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好的图案精度，并且通过提高屏蔽膜的干蚀刻速率能够减少干蚀刻时间。 光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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2.发明授权Photomask blank and production method thereof, and photomask production method, and semiconductor device production method 有权光掩模坯及其制造方法以及光掩模的制造方法以及半导体装置的制造方法公开(公告)号：US08114556B2
公开(公告)日：2012-02-14
申请号：US12066360
申请日：2006-09-08
IPC分类号： G03F1/00
摘要： There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film.The photomask blank of the present invention includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 提供了一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚，通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好图案精度的光掩模坯料， 以及通过提高屏蔽膜的干蚀刻速度能够减少干蚀刻时间的光掩模坯料。 本发明的光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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3.发明申请PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD 有权光电隔离器及其制造方法，以及光电二极管生产方法和半导体器件生产方法公开(公告)号：US20090155698A1
公开(公告)日：2009-06-18
申请号：US12066360
申请日：2006-09-08
摘要： There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film.The photomask blank of the present invention includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 提供了一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚，通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好图案精度的光掩模坯料， 以及通过提高屏蔽膜的干蚀刻速度能够减少干蚀刻时间的光掩模坯料。 本发明的光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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4.发明授权Photomask blank and production method thereof, and photomask production method, and semiconductor device production method 有权光掩模坯及其制造方法以及光掩模的制造方法以及半导体装置的制造方法公开(公告)号：US08697315B2
公开(公告)日：2014-04-15
申请号：US13347425
申请日：2012-01-10
IPC分类号： G03F1/00
摘要： A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚。 光掩模坯料通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好的图案精度，并且通过提高屏蔽膜的干蚀刻速率能够减少干蚀刻时间。 光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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公开(公告)号：US08512916B2
公开(公告)日：2013-08-20
申请号：US12935766
申请日：2009-03-31
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.
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公开(公告)号：US08323858B2
公开(公告)日：2012-12-04
申请号：US13223140
申请日：2011-08-31
IPC分类号： G03F1/24
摘要： A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.
摘要翻译： 光掩模坯料具有形成在透光基板上的可遮光膜。 可遮光膜具有遮光层，该遮光层由含有大于20原子％且不大于40原子％的钼含量的钼硅化物金属形成，并且具有小于40nm的厚度，形成在光上的抗反射层 与遮光层接触并由含有氧和氮中的至少一种的硅化钼化合物形成的屏蔽层和形成在与遮光层接触的遮光层下方的低反射层。
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7.发明授权公开(公告)号：US08304147B2
公开(公告)日：2012-11-06
申请号：US12935517
申请日：2009-03-31
IPC分类号： G03F1/20
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film.
摘要翻译： 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中背面防反射层，遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为60nm以下; 背面抗反射层由含有金属的膜制成，具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成，具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成，并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的30％以下。
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8.发明申请公开(公告)号：US20120100470A1
公开(公告)日：2012-04-26
申请号：US13378739
申请日：2010-06-17
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2具有至少两层结构，包括下层 主要由含有过渡金属，硅和至少一种或多种选自氧和氮的元素的材料构成的层，以及主要由含有过渡金属，硅以及至少一种或多种元素的材料组成的上层 氧气和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比例为1.0以上且20.0以下。
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公开(公告)号：US08029948B2
公开(公告)日：2011-10-04
申请号：US12415429
申请日：2009-03-31
IPC分类号： G03F1/00
摘要： A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.
摘要翻译： 光掩模坯料具有形成在透光基板上的可遮光膜。 可遮光膜具有遮光层，该遮光层由含有大于20原子％且不大于40原子％的钼含量的钼硅化物金属形成，并且具有小于40nm的厚度，形成在光上的抗反射层 与遮光层接触并由含有氧和氮中的至少一种的硅化钼化合物形成的屏蔽层和形成在与遮光层接触的遮光层下方的低反射层。
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10.发明申请PHOTOMASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK BLANK 有权PHOTOMASK BLANK，PHOTOMASK和制造光电隔离层的方法公开(公告)号：US20110104592A1
公开(公告)日：2011-05-05
申请号：US12935517
申请日：2009-03-31
IPC分类号： G03F1/00
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film.
摘要翻译： 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中背面防反射层，遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为60nm以下; 背面抗反射层由含有金属的膜制成，具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成，具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成，并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的30％以下。
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