SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE

Invention Application

US20120129301A1 SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE 有权

Title translation: 包含半导体器件和结构的系统

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Patent Title: SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE
Patent Title (中): 包含半导体器件和结构的系统
Application No.: US13273712

Application Date: 2011-10-14
Publication No.: US20120129301A1

Publication Date: 2012-05-24
Inventor: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Israel Beinglass , Ze'ev Wurman , Paul Lim
Applicant: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Israel Beinglass , Ze'ev Wurman , Paul Lim
Applicant Address: US CA San Jose
Assignee: MonolithIC 3D Inc.
Current Assignee: MonolithIC 3D Inc.
Current Assignee Address: US CA San Jose
Main IPC: H01L21/822
IPC: H01L21/822

SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE

Abstract:

A method of manufacturing a semiconductor device, the method including, providing a first monocrystalline layer including semiconductor regions, overlaying the first monocrystalline layer with an isolation layer, transferring a second monocrystalline layer comprising semiconductor regions to overlay the isolation layer, wherein the first monocrystalline layer and the second monocrystalline layer are formed from substantially different crystal materials; and subsequently etching the second monocrystalline layer as part of forming at least one transistor in the second monocrystalline layer.

Abstract(Chinese):

一种制造半导体器件的方法，所述方法包括：提供包括半导体区域的第一单晶层，将第一单晶层与隔离层重叠，转移包含半导体区域的第二单晶层覆盖隔离层，其中第一单晶层并且第二单晶层由基本上不同的晶体材料形成; 随后蚀刻第二单晶层作为在第二单晶层中形成至少一个晶体管的一部分。

Public/Granted literature

US08273610B2 Method of constructing a semiconductor device and structure Public/Granted day:2012-09-25

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）