发明申请
- 专利标题： SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 基板加工装置，制造基板的方法和制造半导体装置的方法
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申请号： US13331123申请日： 2011-12-20
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公开(公告)号： US20120156886A1公开(公告)日： 2012-06-21
- 发明人: Kenji Shirako , Masanao Fukuda , Takafumi Sasaki , Yoshinori Imai , Daisuke Hara , Shuhei Saido , Koei Kuribayashi
- 申请人： Kenji Shirako , Masanao Fukuda , Takafumi Sasaki , Yoshinori Imai , Daisuke Hara , Shuhei Saido , Koei Kuribayashi
- 申请人地址： JP Tokyo
- 专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-284387 20101221; JP2011-037171 20110223
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; C01B31/36 ; C23F1/08
摘要：
Production efficiency of a substrate (in particular, a substrate on which a SiC epitaxial film is formed) is improved and formation of the film inside a gas supply port is suppressed. This is accomplished by a substrate processing apparatus including a reaction chamber configured to accommodate a plurality of substrates 14, a heating part installed to surround the reaction chamber and configured to heat the reaction chamber, and a first gas supply pipe 60 extending in the reaction chamber, wherein the first gas supply pipe 60 includes a first gas supply port 68 configured to inject a first gas toward the plurality of substrates 14, and first shielding walls installed at both sides of the first gas supply port to expose the first gas supply port 68, the first shielding walls extending toward the plurality of substrates 14 from the first gas supply port 68.
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