公开(公告)号：US09084298B2

公开(公告)日：2015-07-14

申请号：US13034035

申请日：2011-02-24

Applicant: Yukitomo Hirochi ,  Akinori Tanaka ,  Akihiro Sato ,  Takeshi Itoh ,  Daisuke Hara ,  Kenji Shirako ,  Kazuhiro Morimitsu ,  Masanao Fukuda

Inventor： Yukitomo Hirochi ,  Akinori Tanaka ,  Akihiro Sato ,  Takeshi Itoh ,  Daisuke Hara ,  Kenji Shirako ,  Kazuhiro Morimitsu ,  Masanao Fukuda

IPC: H05B6/10 ,  H05B6/02

CPC classification number: H05B6/108

Abstract: There are provided a substrate processing apparatus capable of suppressing leakage of magnetic field during processing of a substrate. The substrate processing apparatus of the present invention includes: a reaction tube having a processing chamber provided therein to process a substrate; an induction heating unit installed outside of the reaction tube to accommodate the reaction tube, wherein the induction heating unit is configured to electromagnetically induction-heat the processing chamber by generating a magnetic field; an accommodation tube installed outside of the induction heating unit to accommodate the induction heating unit, wherein the accommodation tube accommodates the reaction tube and the induction heating unit in an air-tight manner; a shielding unit made of a conductive material installed to surround an outside of the accommodation tube; and an inert gas supply unit installed in a gap between the reaction tube and the accommodation tube where the induction heating unit is installed, wherein the inert gas supply unit is configured to supply an inert gas into the gap.

Abstract translation: 提供了能够抑制基板的加工过程中的磁场泄漏的基板处理装置。 本发明的基板处理装置包括：反应管，其具有设置在其中的处理室，用于处理基板; 感应加热单元，其安装在所述反应管的外部以容纳所述反应管，其中所述感应加热单元被构造成通过产生磁场对所述处理室进行电磁感应加热; 安装在所述感应加热单元外部以容纳所述感应加热单元的容纳管，其中所述容纳管以气密方式容纳所述反应管和所述感应加热单元; 由导电材料制成的屏蔽单元，该导电材料安装成围绕容纳管的外侧; 以及安装在所述反应管与所述感应加热单元的所述容纳管之间的间隙中的惰性气体供给单元，其中，所述惰性气体供给单元构造成将惰性气体供给到所述间隙。

公开(公告)号：US08901013B2

公开(公告)日：2014-12-02

申请号：US13813493

申请日：2011-08-02

Applicant: Kazuhiro Yuasa ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yasuhiro Megawa ,  Masayoshi Minami

Inventor： Kazuhiro Yuasa ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yasuhiro Megawa ,  Masayoshi Minami

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/67

CPC classification number: H01L21/02104 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/3105 ,  H01L21/67017

Abstract: An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.

Abstract translation: 将含氧气体和含氢气体供给到加热至第二温度并且压力设定为小于大气压的预反应室中，并且在预反应室内的两种气体之间产生反应 产生反应性物质，并且将反应性物质供应到处理室中并从其中排出，其中容纳加热到第一温度的基底并将压力设定为小于大气压，并且通过 此时的第二温度设定为不小于第一温度的反应物种。

公开(公告)号：US20130157474A1

公开(公告)日：2013-06-20

申请号：US13813493

申请日：2011-08-02

Applicant: Kazuhiro Yuasa ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yasuhiro Megawa ,  Masayoshi Minami

Inventor： Kazuhiro Yuasa ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yasuhiro Megawa ,  Masayoshi Minami

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/3105 ,  H01L21/67017

Abstract: An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.

Abstract translation: 将含氧气体和含氢气体供给到加热至第二温度并且压力设定为小于大气压的预反应室中，并且在预反应室内的两种气体之间产生反应 产生反应性物质，并且将反应性物质供应到处理室中并从其中排出，其中容纳加热到第一温度的基底并将压力设定为小于大气压，并且通过 此时的第二温度设定为不小于第一温度的反应物种。

公开(公告)号：US20120156886A1

公开(公告)日：2012-06-21

申请号：US13331123

申请日：2011-12-20

Applicant: Kenji Shirako ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yoshinori Imai ,  Daisuke Hara ,  Shuhei Saido ,  Koei Kuribayashi

Inventor： Kenji Shirako ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yoshinori Imai ,  Daisuke Hara ,  Shuhei Saido ,  Koei Kuribayashi

IPC: H01L21/306 ,  C01B31/36 ,  C23F1/08

CPC classification number: C23C16/325 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262

Abstract: Production efficiency of a substrate (in particular, a substrate on which a SiC epitaxial film is formed) is improved and formation of the film inside a gas supply port is suppressed. This is accomplished by a substrate processing apparatus including a reaction chamber configured to accommodate a plurality of substrates 14, a heating part installed to surround the reaction chamber and configured to heat the reaction chamber, and a first gas supply pipe 60 extending in the reaction chamber, wherein the first gas supply pipe 60 includes a first gas supply port 68 configured to inject a first gas toward the plurality of substrates 14, and first shielding walls installed at both sides of the first gas supply port to expose the first gas supply port 68, the first shielding walls extending toward the plurality of substrates 14 from the first gas supply port 68.

Abstract translation: 改善了基板（特别是其上形成有SiC外延膜的基板）的生产效率，并抑制了气体供给口内的膜的形成。 这是通过一种基板处理装置实现的，该基板处理装置包括：反应室，其构造成容纳多个基板14，加热部分安装成围绕反应室并构造成加热反应室;以及第一气体供给管60，其在反应室 其特征在于，所述第一气体供给管60包括：第一气体供给口68，其配置成朝向所述多个基板14喷射第一气体;以及第一遮蔽壁，设置在所述第一气体供给口的两侧，露出所述第一气体供给口68 第一屏蔽壁从第一气体供给口68向多个基板14延伸。

公开(公告)号：US20110065286A1

公开(公告)日：2011-03-17

申请号：US12841440

申请日：2010-07-22

Applicant: Takafumi SASAKI ,  Masanao FUKUDA ,  Masayoshi MINAMI ,  Yasuhiro MEGAWA

Inventor： Takafumi SASAKI ,  Masanao FUKUDA ,  Masayoshi MINAMI ,  Yasuhiro MEGAWA

IPC: H01L21/71 ,  B05C11/00 ,  B05C21/00

CPC classification number: H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/67109 ,  H01L29/40114 ,  H01L29/7881

Abstract: At a low temperature of 500° C. to 700° C., the concentration of atomic oxygen is controlled in a wafer stacked direction, and the thickness distribution of oxide films is kept uniform in the wafer stacked direction. A semiconductor device manufacturing method includes a process of oxidizing substrates by supplying oxygen-containing gas and hydrogen-containing gas through a mixing part from an end side of a substrate arrangement region where the substrates are arranged inside the process chamber so that the gases flow toward the other end side of the substrate arrangement region, and supplying hydrogen-containing gas from mid-flow locations corresponding to the substrate arrangement region. The oxygen-containing gas and the hydrogen-containing gas reacts with each other in the mixing part to produce an oxidation species containing atomic oxygen, and the oxidation species has a maximum concentration at an ejection hole through which the oxidation species is ejected from the mixing part into the process chamber.

Abstract translation: 在500℃〜700℃的低温下，原子氧的浓度在晶片堆叠方向上被控制，氧化膜的厚度分布在晶片堆叠方向上保持均匀。 半导体器件制造方法包括通过从基板布置区域的端面侧的混合部分供给含氧气体和含氢气体来进行氧化基板的处理，其中基板布置区域布置在处理室内，使得气体朝向 在衬底布置区域的另一端侧，并且从对应于衬底布置区域的中流动位置供给含氢气体。 含氧气体和含氢气体在混合部分中彼此反应以产生含有原子氧的氧化物质，氧化物质在喷射孔中具有最大浓度，氧化物质通过其从混合物中喷出 部分进入处理室。

公开(公告)号：US09028614B2

公开(公告)日：2015-05-12

申请号：US13406056

申请日：2012-02-27

Applicant: Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

Inventor： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/673 ,  H01L21/677 ,  C23C16/32 ,  C23C16/44

CPC classification number: H01L21/67109 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4587 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757

Abstract: When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

Abstract translation: 当在1500℃至1700℃的超高温下进行诸如SiC外延生长的处理时，可以将成膜气体降低至歧管的耐热温度，并且可以提高膜质量均匀性。 基板处理装置包括用于处理多个基板的反应室，用于保持多个基板的船，用于向多个基板供给成膜气体的气体供给喷嘴，用于排出成膜的排气口 供应到反应室的气体，限定比由反应室和船的内壁限定的第一流动路径窄的第二流动路径的热交换部分，以及安装在多个 底物。

公开(公告)号：US20100282166A1

公开(公告)日：2010-11-11

申请号：US12774141

申请日：2010-05-05

Applicant: Masanao FUKUDA ,  Akihiro SATO ,  Akinori TANAKA ,  Kazuhiro MORIMITSU

Inventor： Masanao FUKUDA ,  Akihiro SATO ,  Akinori TANAKA ,  Kazuhiro MORIMITSU

IPC: C23C16/32

CPC classification number: C23C16/347 ,  C23C16/4412 ,  C23C16/45578 ,  C30B25/14 ,  C30B29/36

Abstract: Provided is a heat treatment apparatus. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) epitaxial films on SiC substrates, a substrate holding tool configured to hold a plurality of substrates in a state where the substrates are vertically arranged and approximately horizontally oriented, so as to hold the substrates in the process chamber, a first reaction gas supply nozzle configured to supply a carbon-containing gas into the process chamber, a second reaction gas supply nozzle configured to supply a silicon-containing gas into the process chamber, a magnetic field generating coil disposed at an outside of the process chamber for electromagnetic induction heating, and a coil supporter configured to support the magnetic field generating coil. An upper end of the second reaction gas supply nozzle is lower than a lower end of the coil supporter configured to support the magnetic field generating coil.

Abstract translation: 提供一种热处理装置。 该热处理装置包括：处理室，其被配置为在SiC基板上生长碳化硅（SiC）外延膜;基板保持工具，其构造成在基板垂直布置且大致水平取向的状态下保持多个基板; 将基板保持在处理室中，构造成将含碳气体供应到处理室中的第一反应气体供给喷嘴，构造成将含硅气体供应到处理室中的第二反应气体供给喷嘴，产生磁场的磁场 设置在用于电磁感应加热的处理室外部的线圈，以及构造成支撑磁场产生线圈的线圈支撑件。 第二反应气体供给喷嘴的上端低于构成为支撑磁场产生线圈的线圈支撑体的下端。

公开(公告)号：US20100035440A1

公开(公告)日：2010-02-11

申请号：US12536061

申请日：2009-08-05

Applicant: Masanao Fukuda ,  Takafumi Sasaki ,  Kazuhiro Yuasa

Inventor： Masanao Fukuda ,  Takafumi Sasaki ,  Kazuhiro Yuasa

IPC: H01L21/465

CPC classification number: H01L21/02238 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45519 ,  C23C16/45546 ,  C23C16/45548 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/52 ,  H01L21/02255 ,  H01L21/31662

Abstract: A substrate processing apparatus includes: a reaction tube configured to process a plurality of substrates; a heater configured to heat the inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a first nozzle disposed in an area corresponding to a substrate arrangement area where the plurality of substrates are arranged, and configured to supply hydrogen-containing gas from a plurality of locations of the area into the reaction tube; a second nozzle disposed in the area corresponding to the substrate arrangement area, and configured to supply oxygen-containing gas from a plurality of locations of the area into the reaction tube; an exhaust outlet configured to exhaust the inside of the reaction tube; and a pressure controller configured to control pressure inside the reaction tube to be lower than atmospheric pressure, wherein the first nozzle is provided with a plurality of first gas ejection holes, and the second nozzle is provided with as many second gas ejection holes as at least the plurality of substrates so that the second gas ejection holes correspond to at least the respective substrates.

Abstract translation: 一种基板处理装置，包括：反应管，被配置为处理多个基板; 加热器，其构造成加热反应管的内部; 保持器，其构造成在所述反应管内布置和保持所述多个基板; 第一喷嘴，其设置在与配置有多个基板的基板配置区域对应的区域中，并且构造成将来自该区域的多个位置的含氢气体供给到反应管中; 第二喷嘴，其设置在与所述基板配置区域对应的区域中，并且被配置为将所述区域的多个位置的含氧气体供应到所述反应管中; 排气口，其构造成排出反应管的内部; 以及压力控制器，被配置为将所述反应管内的压力控制为低于大气压力，其中所述第一喷嘴设置有多个第一气体喷射孔，并且所述第二喷嘴设置有至少至少两个第二气体喷射孔 所述多个基板使得所述第二气体喷射孔至少对应于各个基板。

公开(公告)号：US20110253049A1

公开(公告)日：2011-10-20

申请号：US13064810

申请日：2011-04-18

Applicant: Masanao Fukuda ,  Kazuhiro Morimitsu

Inventor： Masanao Fukuda ,  Kazuhiro Morimitsu

IPC: C23C16/455

CPC classification number: C23C16/45591 ,  C23C16/45578 ,  C30B25/14 ,  C30B25/165

Abstract: There is provided a semiconductor processing apparatus comprising a processing tube for housing a substrate support member that supports a plurality of substrates stacked at a prescribed pitch in a vertical direction; a gas supply part that extends in a direction in which the substrates are stacked in the processing tube and that has a plurality of gas supply openings; an exhaust part that opens onto the processing tube; a gas rectifying plate that is disposed in a space between a penumbra of the substrates supported on the substrate support member and an inner wall of the processing tube, and that extends from the gas supply part in a circumferential direction of the processing tube and in the direction in which the substrates are stacked; and a gas flow regulating part disposed in a space in the processing tube that is above a top-most gas supply opening and a top-most substrate and in a space in the processing tube that is below a bottom-most substrate and a bottom-most gas supply opening. A thin film formed on the substrate can be made more uniform.

Abstract translation: 提供了一种半导体处理装置，其包括：处理管，用于容纳基板支撑构件，所述基板支撑构件支撑以垂直方向以规定间距堆叠的多个基板; 气体供给部，其沿着所述基板堆叠在所述处理管中并具有多个气体供给开口的方向延伸; 通向处理管上的排气部分; 气体整流板，其设置在支撑在基板支撑部件上的基板的半暗区与处理管的内壁之间的空间中，并且从处理管的圆周方向从气体供给部延伸， 堆叠衬底的方向; 以及气体流量调节部，其设置在所述处理管的空间中，所述空间位于最上面的气体供给开口和最上面的基板之上，并且处于所述处理管的位于最下面的基板之下的空间中， 大部分供气口。 可以使形成在基板上的薄膜更均匀。

公开(公告)号：US20100275848A1

公开(公告)日：2010-11-04

申请号：US12768191

申请日：2010-04-27

Applicant: Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

Inventor： Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

IPC: C23C16/32

CPC classification number: C23C16/325 ,  C23C16/4401 ,  C23C16/45574 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36

Abstract: Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the processing chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.

Abstract translation: 提供一种能够在多个基板上形成均匀厚度的膜的热处理装置。 所述热处理装置包括：处理室，被配置为在晶片上生长碳化硅（SiC）膜;舟状结构，用于在所述晶片垂直布置且大致水平定向的状态下保持多个晶片，以将所述晶片保持在所述晶片中 处理室，安装在处理室中的加热单元和构造成供应反应气体的气体供给喷嘴。 加热单元包括构造成覆盖船的至少一部分的基座和设置在船和基座之间的基座壁。