Invention Application
- Patent Title: METHOD AND APPARATUS FOR FORMING SILICON NITRIDE FILM
- Patent Title (中): 用于形成氮化硅膜的方法和装置
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Application No.: US13332691Application Date: 2011-12-21
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Publication No.: US20120178264A1Publication Date: 2012-07-12
- Inventor: Hiroki MURAKAMI , Yosuke WATANABE , Kazuhide HASEBE
- Applicant: Hiroki MURAKAMI , Yosuke WATANABE , Kazuhide HASEBE
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2010-284634 20101221; JP2011-237988 20111028
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C23C16/455
Abstract:
A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas, prior to forming the silicon nitride film on the surface of the object to be processed.
Public/Granted literature
- US08753984B2 Method and apparatus for forming silicon nitride film Public/Granted day:2014-06-17
Information query
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