公开(公告)号：US08722510B2

公开(公告)日：2014-05-13

申请号：US13194426

申请日：2011-07-29

Applicant: Masahisa Watanabe ,  Kazuhide Hasebe

Inventor： Masahisa Watanabe ,  Kazuhide Hasebe

IPC: H01L21/76

CPC classification number: H01L21/67167 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02304 ,  H01L21/02323 ,  H01L21/32055 ,  H01L21/32105 ,  H01L21/67207 ,  H01L21/76227

Abstract: A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the semiconductor substrate, heating the semiconductor substrate having the seed layer formed thereon and supplying a monosilane gas to the surface of the seed layer so as to form a silicon film on the seed layer, filling the trench of the semiconductor substrate, which has the silicon film formed thereon, with a filling material that shrinks by burning, and burning the semiconductor substrate coated by the filling material filling the trench in an atmosphere containing water and/or a hydroxy group while changing the filling material into a silicon oxide and changing the silicon film and the seed layer into a silicon oxide.

Abstract translation: 填充沟槽的方法包括加热其中形成有沟槽的半导体衬底和至少形成在沟槽的侧壁上的氧化膜，并将氨基硅烷气体供应到衬底的表面，以在半导体上形成晶种层 对其上形成有籽晶层的半导体基板进行加热，并向种子层的表面供给单硅烷气体，以在种子层上形成硅膜，填充形成有硅膜的半导体衬底的沟槽 在其上通过燃烧收缩的填充材料，并且在将填充材料变为氧化硅并且改变硅膜的同时，在填充有水和/或羟基的气氛中填充沟槽的填充材料涂覆的半导体衬底燃烧， 种子层成为氧化硅。

公开(公告)号：US20130189853A1

公开(公告)日：2013-07-25

申请号：US13624190

申请日：2012-09-21

Applicant: Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, JR. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

Inventor： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, JR. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

IPC: H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

Abstract: This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Abstract translation: 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US08431494B2

公开(公告)日：2013-04-30

申请号：US13164280

申请日：2011-06-20

Applicant: Hiroki Murakami ,  Kazuhide Hasebe ,  Kazuya Yamamoto ,  Toshihiko Takahashi ,  Daisuke Suzuki

Inventor： Hiroki Murakami ,  Kazuhide Hasebe ,  Kazuya Yamamoto ,  Toshihiko Takahashi ,  Daisuke Suzuki

IPC: H01L21/469 ,  H01L21/316

CPC classification number: C23C16/401 ,  C23C16/45523

Abstract: A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed.

Abstract translation: 在处理室中的待处理物体的表面上形成氧化硅膜的成膜方法包括通过将种子气体供给到待处理物体的表面上来吸收包含硅烷类气体的种子气体 处理室，通过将作为原料气体的含硅气体和含有该杂质的添加气体供给到处理室中，形成具有杂质的硅膜，氧化硅膜，将硅膜转换成氧化硅膜。 因此，在待处理物体的表面上形成具有高密度和高应力的氧化硅膜。

公开(公告)号：US08383522B2

公开(公告)日：2013-02-26

申请号：US13154728

申请日：2011-06-07

Applicant: Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

Inventor： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

IPC: H01L21/302 ,  H01L21/461

CPC classification number: G03F7/405 ,  G03F7/0035 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

Abstract: There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.

Abstract translation: 提供了一种微图案形成方法，包括在基板上形成薄膜; 在加工薄膜时形成用作掩模的膜; 将作为掩模的胶片处理成包括具有预设间距的线的图案; 修剪包括线条的图案; 并且通过交替地供给源气体和活性氧物质，在包括线条的图案和薄膜上形成氧化膜。 这里，在构成为形成氧化膜的成膜装置中连续进行修整图案的修整和形成氧化膜的工序。

公开(公告)号：US20130005142A1

公开(公告)日：2013-01-03

申请号：US13537622

申请日：2012-06-29

Applicant: Akinobu Kakimoto ,  Satoshi Takagi ,  Kazuhide Hasebe

Inventor： Akinobu Kakimoto ,  Satoshi Takagi ,  Kazuhide Hasebe

IPC: H01L21/283

CPC classification number: C23C16/24 ,  C23C16/045 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877

Abstract: Provided is a method and apparatus for forming a silicon film, which are capable of suppressing generation of a void or seam. The method includes performing a first film-forming process, performing an etching process, performing a doping process, and performing a second film-forming process. In the first film-forming process, a non-doped silicon film that is not doped with an impurity is formed so as to embed a groove of an object. In the etching process, the non-doped silicon film formed via the first film-forming process is etched. In the doping process, the non-doped silicon film etched via the etching process is doped with an impurity. In the second film-forming process, an impurity-doped silicon film is formed so as to embed the silicon film doped via the doping process.

Abstract translation: 提供一种能够抑制空隙或接缝的产生的用于形成硅膜的方法和装置。 该方法包括进行第一成膜处理，进行蚀刻处理，进行掺杂工序，以及进行第二成膜工序。 在第一成膜工艺中，形成未掺杂有杂质的非掺杂硅膜，从而嵌入物体的凹槽。 在蚀刻工艺中，蚀刻经由第一成膜工艺形成的非掺杂硅膜。 在掺杂工艺中，通过蚀刻工艺蚀刻的非掺杂硅膜掺杂有杂质。 在第二成膜工艺中，形成杂质掺杂硅膜，以便嵌入通过掺杂工艺掺杂的硅膜。

公开(公告)号：US08298628B2

公开(公告)日：2012-10-30

申请号：US12476734

申请日：2009-06-02

Applicant: Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

Inventor： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

IPC: C23C16/00 ,  H05H1/24

CPC classification number: H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

Abstract: This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Abstract translation: 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US20120178264A1

公开(公告)日：2012-07-12

申请号：US13332691

申请日：2011-12-21

Applicant: Hiroki MURAKAMI ,  Yosuke WATANABE ,  Kazuhide HASEBE

Inventor： Hiroki MURAKAMI ,  Yosuke WATANABE ,  Kazuhide HASEBE

IPC: H01L21/31 ,  C23C16/455

CPC classification number: C23C16/345 ,  C23C16/45525

Abstract: A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas, prior to forming the silicon nitride film on the surface of the object to be processed.

Abstract translation: 一种在待处理物体的表面上形成氮化硅膜的方法，该方法包括通过使用至少一种氨基硅烷化合物形成在待加工物体的表面上起氮化硅膜的晶种的种子层的作用， 在将待加工物体的表面上形成氮化硅膜之前。

公开(公告)号：US20110263105A1

公开(公告)日：2011-10-27

申请号：US13094043

申请日：2011-04-26

Applicant: Kazuhide HASEBE ,  Hiroki MURAKAMI ,  Akinobu KAKIMOTO

Inventor： Kazuhide HASEBE ,  Hiroki MURAKAMI ,  Akinobu KAKIMOTO

IPC: H01L21/205 ,  C23C16/46 ,  C23C16/52 ,  C23C16/24 ,  C23C16/455 ,  B82Y40/00

CPC classification number: H01L21/76843 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/52 ,  H01L21/76876

Abstract: The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group.

Abstract translation: 非晶硅膜形成方法包括通过加热基底并将氨基硅烷基气体流动到加热的基底上在基底的表面上形成籽晶层; 通过加热基底，在加热的基体的表面上的种子层上供给不含氨基的硅烷系气体，将不含氨基的硅烷类气体进行热分解，在种子层上形成非晶硅膜。

公开(公告)号：US08025931B2

公开(公告)日：2011-09-27

申请号：US11822979

申请日：2007-07-11

Applicant: Pao-Hwa Chou ,  Kazuhide Hasebe

Inventor： Pao-Hwa Chou ,  Kazuhide Hasebe

IPC: C23C16/00

CPC classification number: C23C16/452 ,  C23C16/345 ,  C23C16/4405

Abstract: A method for using a film formation apparatus performs a first film formation process, while supplying a first film formation gas into a process field inside a process container, thereby forming a first thin film on a first target substrate inside the process field. After unloading the first target substrate from the process container, the method performs a cleaning process of an interior of the process container, while supplying a cleaning gas into the process field, and generating plasma of the cleaning gas by an exciting mechanism. Then, the method performs a second film formation process, while supplying a second film formation gas into the process field, thereby forming a second thin film on a target substrate inside the process field. The second film formation process is a plasma film formation process that generates plasma of the second film formation gas by the exciting mechanism.

Abstract translation: 使用成膜装置的方法进行第一成膜处理，同时将第一成膜气体供给到处理容器内的处理场中，从而在处理场内的第一靶基板上形成第一薄膜。 在从处理容器卸载第一目标基板之后，该方法对处理容器的内部执行清洁处理，同时向处理区域供应清洁气体，并通过激励机构产生清洁气体的等离子体。 然后，该方法进行第二成膜工艺，同时将第二成膜气体供应到工艺场中，从而在工艺场内的目标衬底上形成第二薄膜。 第二成膜工艺是通过激发机构产生第二成膜气体的等离子体的等离子体膜形成工艺。

公开(公告)号：US07993705B2

公开(公告)日：2011-08-09

申请号：US11819500

申请日：2007-06-27

Applicant: Nobutake Nodera ,  Kazuhide Hasebe ,  Kazuya Yamamoto

Inventor： Nobutake Nodera ,  Kazuhide Hasebe ,  Kazuya Yamamoto

IPC: C23C16/56 ,  C23C16/00 ,  C23C16/54 ,  B08B7/00 ,  B08B7/04

CPC classification number: H01L21/67109 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

Abstract: A method for using a film formation apparatus includes performing film formation of a product film selected from the group consisting of a silicon nitride film and a silicon oxynitride film on a target substrate within a reaction chamber of the film formation apparatus; and unloading the target substrate from the reaction chamber. Thereafter, the method includes first heating an inner surface of the reaction chamber at a post process temperature while supplying a post process gas for nitridation into the reaction chamber, thereby performing nitridation of a by-product film deposited on the inner surface of the reaction chamber; then rapidly cooling the inner surface of the reaction chamber, thereby cracking the by-product film by a thermal stress; and then forcibly exhausting gas from inside the reaction chamber to carry the by-product film, thus peeled off from the inner surface.

Abstract translation: 使用成膜装置的方法包括在成膜装置的反应室内的目标基板上进行选自由氮化硅膜和氮氧化硅膜组成的组中的产品膜的成膜; 并从反应室卸载目标衬底。 此后，该方法包括在后处理温度下先加热反应室的内表面，同时向反应室供应用于氮化的后处理气体，从而对沉积在反应室内表面上的副产物膜进行氮化 ; 然后快速冷却反应室的内表面，从而通过热应力裂解副产物膜; 然后从反应室内强制排出气体以携带副产物膜，从而从内表面剥离。