发明申请
- 专利标题： GRAPHENE DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 石墨装置及其制造方法
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申请号： US13143932申请日： 2011-02-23
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公开(公告)号： US20120181509A1公开(公告)日： 2012-07-19
- 发明人: Qingqing Liang , Zhi Jin , Wenwu Wang , Huicai Zhong , Huilong Zhu
- 申请人： Qingqing Liang , Zhi Jin , Wenwu Wang , Huicai Zhong , Huilong Zhu
- 优先权： CN201010532003.1 20101029
- 国际申请： PCT/CN11/71194 WO 20110223
- 主分类号： H01L29/775
- IPC分类号： H01L29/775 ; H01L21/335
摘要：
A graphene device structure and a method for manufacturing the same are provided. The graphene device structure comprises: a graphene layer; a gate region formed on the graphene layer; and a doped semiconductor region formed at one side of the gate region and connected with the graphene layer, wherein the doped semiconductor region is a drain region of the graphene device structure, and the graphene layer formed at one side of the gate region is a source region of the graphene device structure. The on/off ratio of the graphene device structure may be improved by the doped semiconductor region without increasing the band gaps of the graphene material, so that the applicability of the graphene material in CMOS devices may be enhanced without decreasing the carrier mobility of graphene materials and speed of the devices.
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