发明申请
- 专利标题： STRESSED CHANNEL FET WITH SOURCE/DRAIN BUFFERS
- 专利标题（中）： 具有源/漏极缓冲器的应力通道FET
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申请号： US13009029申请日： 2011-01-19
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公开(公告)号： US20120181549A1公开(公告)日： 2012-07-19
- 发明人: Jeffrey B. Johnson , Ramachandran Muralidhar , Philip J. Oldiges , Viorel Ontalus , Kai Xiu
- 申请人： Jeffrey B. Johnson , Ramachandran Muralidhar , Philip J. Oldiges , Viorel Ontalus , Kai Xiu
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/161
- IPC分类号： H01L29/161 ; H01L29/78 ; H01L21/336
摘要：
A method for forming a stressed channel field effect transistor (FET) with source/drain buffers includes etching cavities in a substrate on either side of a gate stack located on the substrate; depositing source/drain buffer material in the cavities; etching the source/drain buffer material to form vertical source/drain buffers adjacent to a channel region of the FET; and depositing source/drain stressor material in the cavities adjacent to and over the vertical source/drain buffers.
公开/授权文献
- US08361847B2 Stressed channel FET with source/drain buffers 公开/授权日：2013-01-29
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