发明申请
- 专利标题： SENSE OPERATION IN A MEMORY DEVICE
- 专利标题（中）： 在存储器件中的感测操作
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申请号： US13009540申请日： 2011-01-19
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公开(公告)号： US20120182797A1公开(公告)日： 2012-07-19
- 发明人: Yijie Zhao , Akira Goda , Mark A. Helm
- 申请人： Yijie Zhao , Akira Goda , Mark A. Helm
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
Methods for sensing and memory devices are disclosed. One such method for sensing determines a threshold voltage of an n-bit memory cell that is adjacent to an m-bit memory cell to be sensed. A control gate of the m-bit memory cell to be sensed is biased with a sense voltage adjusted responsive to the determined threshold voltage of the n-bit memory cell.
公开/授权文献
- US08374028B2 Sense operation in a memory device 公开/授权日：2013-02-12
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