发明申请
US20120187379A1 ELECTRONIC DEVICE 有权
电子设备

ELECTRONIC DEVICE
摘要:
A thin film transistor has a dual semiconducting layer comprising two semiconducting sublayers. The first sublayer comprises a polythiophene and carbon nanotubes. The second sublayer comprises the polythiophene and has no carbon nanotubes. Devices comprises the dual semiconducting layer exhibit high mobility.
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