发明申请
US20120187522A1 STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL GATE DEVICES
审中-公开
用于降低高K金属栅极装置中VT-W效应的结构和方法
- 专利标题： STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL GATE DEVICES
- 专利标题（中）： 用于降低高K金属栅极装置中VT-W效应的结构和方法
-
申请号： US13010041申请日： 2011-01-20
-
公开(公告)号： US20120187522A1公开(公告)日： 2012-07-26
- 发明人: Michael V. Aquilino , Christopher V. Baiocco , Richard A. Conti , Daniel J. Jaeger , Vijay Narayanan
- 申请人： Michael V. Aquilino , Christopher V. Baiocco , Richard A. Conti , Daniel J. Jaeger , Vijay Narayanan
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; G06F17/50 ; H01L21/762
摘要：
A substrate is provided. An STI trench is formed in the substrate. A fill material is formed in the STI trench and then planarized. The substrate is exposed to an oxidizing ambient, growing a liner at a bottom and sidewalls of the STI trench. The liner reduces the Vt-W effect in high-k metal gate devices.
信息查询
IPC分类:
