发明申请
- 专利标题： METHOD FOR FORMING SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 形成半导体膜的方法和制造半导体器件的方法
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申请号： US13368379申请日： 2012-02-08
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公开(公告)号： US20120208360A1公开(公告)日： 2012-08-16
- 发明人: Tetsuhiro TANAKA , Ryo TOKUMARU , Takashi OHTSUKI , Ryota TAJIMA , Erika KATO
- 申请人： Tetsuhiro TANAKA , Ryo TOKUMARU , Takashi OHTSUKI , Ryota TAJIMA , Erika KATO
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2011-027964 20110211
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/3065
摘要：
A microcrystalline semiconductor film is formed over a substrate using a plasma CVD apparatus which includes a reaction chamber in such a manner that a deposition gas and hydrogen are supplied to the reaction chamber in which the substrate is set between a first electrode and a second electrode; and plasma is generated in the reaction chamber by supplying high-frequency power to the first electrode. Note that the plasma density in a region overlapping with an end portion of the substrate in a region where the plasma is generated is set to be higher than that in a region which is positioned more on the inside than the region overlapping with the end portion of the substrate, so that the microcrystalline semiconductor film is formed over a region which is positioned more on the inside than the end portion of the substrate.
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