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公开(公告)号：US09443989B2
公开(公告)日：2016-09-13
申请号：US13172359
申请日：2011-06-29
申请人： Tetsuhiro Tanaka , Erika Kato
发明人： Tetsuhiro Tanaka , Erika Kato
IPC分类号： H01L21/336 , H01L29/786 , H01L21/02 , H01L29/04 , H01L29/66 , H01L31/0304 , H01L31/0368 , H01L31/0376 , H01L31/072 , H01L31/0735 , H01L31/113 , H01L31/18 , H01L31/20
CPC分类号： H01L31/20 , H01L21/02532 , H01L21/02576 , H01L21/02592 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78648 , H01L29/78696 , H01L31/0304 , H01L31/03685 , H01L31/03687 , H01L31/0376 , H01L31/03762 , H01L31/03765 , H01L31/072 , H01L31/0735 , H01L31/105 , H01L31/1136 , H01L31/1808 , H01L31/1812 , H01L31/1816 , H01L31/1824 , H01L31/1852 , H01L31/202 , Y02E10/544 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.
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公开(公告)号：US09240493B2
公开(公告)日：2016-01-19
申请号：US13172359
申请日：2011-06-29
申请人： Tetsuhiro Tanaka , Erika Kato
发明人： Tetsuhiro Tanaka , Erika Kato
IPC分类号： H01L21/20 , H01L29/786 , H01L21/02 , H01L29/04 , H01L29/66 , H01L31/0304 , H01L31/0368 , H01L31/0376 , H01L31/072 , H01L31/0735 , H01L31/113 , H01L31/18 , H01L31/20
摘要： A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.
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3.发明申请公开(公告)号：US20120003787A1
公开(公告)日：2012-01-05
申请号：US13172359
申请日：2011-06-29
申请人： Tetsuhiro Tanaka , Erika Kato
发明人： Tetsuhiro Tanaka , Erika Kato
IPC分类号： H01L21/336 , H01L31/20 , H01L21/205
CPC分类号： H01L31/20 , H01L21/02532 , H01L21/02576 , H01L21/02592 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78648 , H01L29/78696 , H01L31/0304 , H01L31/03685 , H01L31/03687 , H01L31/0376 , H01L31/03762 , H01L31/03765 , H01L31/072 , H01L31/0735 , H01L31/105 , H01L31/1136 , H01L31/1808 , H01L31/1812 , H01L31/1816 , H01L31/1824 , H01L31/1852 , H01L31/202 , Y02E10/544 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.
摘要翻译： 提供了一种用于形成含有杂质元素并具有低电阻率的非晶半导体的方法，以及制造具有优异的电特性，高产率的半导体器件的方法。 在利用等离子体CVD法形成含有杂质元素的非晶半导体的方法中，在可以获得根据帕邢定律的最小放电起始电压的压力和电极距离处的电极上施加脉冲调制放电初始电压 由此形成含有杂质元素并具有低电阻率的非晶半导体。
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公开(公告)号：US07962549B2
公开(公告)日：2011-06-14
申请号：US12839311
申请日：2010-07-19
IPC分类号： G06F15/16
CPC分类号： A63F13/352 , A63F13/12 , A63F13/335 , A63F13/358 , A63F13/71 , A63F2300/401 , A63F2300/407 , A63F2300/50 , A63F2300/513 , A63F2300/532 , A63F2300/534 , A63F2300/5546 , G06Q10/025 , G06Q20/108 , G06Q40/123 , H04L67/1002 , H04L67/1012 , H04L67/1014 , H04L67/38 , Y10S707/99931 , Y10S707/99936
摘要： Methods for creating an interactive gaming environment are provided. In various embodiments, methods of the present invention may include initializing an interactive game application at a game server which is then characterized as having an active status, notifying a lobby server concerning the active status of the game server, registering the application with a universe management server via the lobby server, and allowing users to join the interactive gaming environment. The users joining the interactive gaming environment may be identified by a server key obtained from the game server.
摘要翻译： 提供了创建交互式游戏环境的方法。 在各种实施例中，本发明的方法可以包括在游戏服务器上初始化交互式游戏应用程序，该游戏服务器的特征在于具有活动状态，通知大厅服务器关于游戏服务器的活动状态，将应用程序注册到宇宙管理 服务器，并允许用户加入交互式游戏环境。 可以通过从游戏服务器获得的服务器密钥来识别加入交互式游戏环境的用户。
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公开(公告)号：US20100327281A1
公开(公告)日：2010-12-30
申请号：US12820201
申请日：2010-06-22
申请人： Miyako NAKAJIMA , Hidekazu MIYAIRI , Toshiyuki ISA , Erika KATO , Mitsuhiro ICHIJO , Kazutaka KURIKI , Tomokazu YOKOI
发明人： Miyako NAKAJIMA , Hidekazu MIYAIRI , Toshiyuki ISA , Erika KATO , Mitsuhiro ICHIJO , Kazutaka KURIKI , Tomokazu YOKOI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/6675 , H01L29/04 , H01L29/4908 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.
摘要翻译： 目的是提供具有小截止电流，大电流和高场效应迁移率的薄膜晶体管。 层叠氮化硅层和通过氧化氮化硅层形成的氧化硅层作为栅极绝缘层，从栅极绝缘层的氧化硅层的界面生长晶体，形成微晶半导体层; 因此，制造了反交错的薄膜晶体管。 由于晶体从栅极绝缘层生长，所以薄膜晶体管可以具有高结晶度，大电流和高的场效应迁移率。 此外，提供缓冲层以减少电流。
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公开(公告)号：US07711847B2
公开(公告)日：2010-05-04
申请号：US10359359
申请日：2003-02-04
IPC分类号： G06F15/16
CPC分类号： A63F13/352 , A63F13/12 , A63F13/335 , A63F13/358 , A63F13/71 , A63F2300/401 , A63F2300/407 , A63F2300/50 , A63F2300/513 , A63F2300/532 , A63F2300/534 , A63F2300/5546 , G06Q10/025 , G06Q20/108 , G06Q40/123 , H04L67/1002 , H04L67/1012 , H04L67/1014 , H04L67/38 , Y10S707/99931 , Y10S707/99936
摘要： A multi-user online application network computing configuration maintains application level information at a portal or lobby server, rather than at each individual application server or host machine. Users can therefore learn about and select a desired application, such as an online game, through communication with the lobby server. After appropriate authorization processing, users can contact the associated application server, such as a game host, to begin their participation. The lobby server can therefore reduce the bandwidth requirements and other operating demands on the application server. In addition, cross-application communications in real-time are facilitated through the lobby server concept. The multi-user application environment also provides a common data model for maintaining user information, such as for establishing a ladder ranking system in the online gaming context in which user achievements are recorded and shared among users and among the different game applications.
摘要翻译： 多用户在线应用网络计算配置在门户或大厅服务器而不是在每个单独的应用服务器或主机上维护应用级信息。 因此，用户可以通过与大厅服务器的通信来了解和选择所需的应用程序，例如在线游戏。 经过适当的授权处理，用户可以联系相关的应用服务器，如游戏主机，开始他们的参与。 因此，大厅服务器可以减少应用服务器上的带宽要求和其他操作需求。 此外，通过大厅服务器概念，便于实时交叉应用通信。 多用户应用环境还提供用于维护用户信息的通用数据模型，例如在在线游戏环境中建立梯级排名系统，其中用户成就在用户之间以及不同游戏应用程序之间共享。
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公开(公告)号：US07613800B2
公开(公告)日：2009-11-03
申请号：US12218591
申请日：2008-07-15
IPC分类号： G06F15/173
CPC分类号： A63F13/352 , A63F13/12 , A63F13/335 , A63F13/358 , A63F13/71 , A63F2300/401 , A63F2300/407 , A63F2300/50 , A63F2300/513 , A63F2300/532 , A63F2300/534 , A63F2300/5546 , G06Q10/025 , G06Q20/108 , G06Q40/123 , H04L67/1002 , H04L67/1012 , H04L67/1014 , H04L67/38 , Y10S707/99931 , Y10S707/99936
摘要： Systems for communication across multiple game applications are provided. In various embodiments, systems of the present invention may include a first application server hosting a first game application, a second application server hosting a second game application that is different from the first game application, a first client device for interaction with the first game application, a second client device for interaction with the second game application, and a universe management server for maintaining information about the first client device and the second client device. The information maintained in the universe management server may include game application interaction information, which allows the universe management server to facilitate real-time communication between a user of the first client device and a user of the second client device. The universe management system may further receive communications from both client devices via the first and second application server.
摘要翻译： 提供了跨多个游戏应用程序进行通信的系统。 在各种实施例中，本发明的系统可以包括托管第一游戏应用的第一应用服务器，托管不同于第一游戏应用的第二游戏应用的第二应用服务器，用于与第一游戏应用交互的第一客户端设备 ，用于与第二游戏应用程序交互的第二客户端设备，以及用于维护关于第一客户端设备和第二客户端设备的信息的Universe管理服务器。 维护在宇宙管理服务器中的信息可以包括游戏应用交互信息，其允许宇宙管理服务器促进第一客户端设备的用户和第二客户端设备的用户之间的实时通信。 宇宙管理系统还可以经由第一和第二应用服务器从两个客户端设备接收通信。
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公开(公告)号：US20080280686A1
公开(公告)日：2008-11-13
申请号：US12218579
申请日：2008-07-15
CPC分类号： A63F13/352 , A63F13/12 , A63F13/335 , A63F13/358 , A63F13/71 , A63F2300/401 , A63F2300/407 , A63F2300/50 , A63F2300/513 , A63F2300/532 , A63F2300/534 , A63F2300/5546 , G06Q10/025 , G06Q20/108 , G06Q40/123 , H04L67/1002 , H04L67/1012 , H04L67/1014 , H04L67/38 , Y10S707/99931 , Y10S707/99936
摘要： Systems for balancing distribution of participants in a gaming environment are provided. In various embodiments, systems of the present invention may include multiple application servers each hosting a common game application, a lobby server for assigning new client devices to one of the application servers, and a universe manager for receiving reports from each of the application servers concerning the status of the game application. The universe manager may further instruct the lobby server to reallocate assignment of subsequent new client devices in order to balance the number of client devices assigned to each application servers.
摘要翻译： 提供了用于平衡游戏环境中的参与者分配的系统。 在各种实施例中，本发明的系统可以包括每个托管公共游戏应用的多个应用服务器，用于将新客户端设备分配给应用服务器之一的大厅服务器，以及用于从每个应用服务器接收关于 游戏应用的状态。 宇宙管理器可以进一步指示大厅服务器重新分配后续新的客户端设备的分配，以便平衡分配给每个应用服务器的客户端设备的数量。
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9.发明授权公开(公告)号：US09048327B2
公开(公告)日：2015-06-02
申请号：US13355340
申请日：2012-01-20
申请人： Tetsuhiro Tanaka , Takashi Ienaga , Ryu Komatsu , Erika Kato , Ryota Tajima , Yasuhiro Jinbo
发明人： Tetsuhiro Tanaka , Takashi Ienaga , Ryu Komatsu , Erika Kato , Ryota Tajima , Yasuhiro Jinbo
IPC分类号： H01L21/00 , H01L29/786 , H01L21/02 , H01L29/04 , H01L29/66
CPC分类号： H01L29/78696 , H01L21/02422 , H01L21/0245 , H01L21/02502 , H01L21/02513 , H01L21/02532 , H01L21/02595 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78648 , H01L29/78654 , H01L29/78678
摘要： An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cm3 and lower than or equal to 2.35 g/cm3, preferably higher than or equal to 2.30 g/cm3 and lower than or equal to 2.33 g/cm3.
摘要翻译： 本发明的一个实施方案是具有大于或等于70nm且小于或等于100nm的厚度的微晶半导体膜，并且包括从微晶半导体膜的表面部分地突出的晶粒。 晶粒具有取向平面，并且包括尺寸为13nm以上的微晶。 此外，微晶半导体膜的膜密度高于或等于2.25g / cm 3，低于或等于2.35g / cm 3，优选高于或等于2.30g / cm 3，低于或等于2.33g / cm3。
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10.发明授权Thin film transistor including silicon nitride layer and manufacturing method thereof 有权包括氮化硅层的薄膜晶体管及其制造方法公开(公告)号：US09018109B2
公开(公告)日：2015-04-28
申请号：US12715629
申请日：2010-03-02
申请人： Hidekazu Miyairi , Erika Kato , Kunihiko Suzuki
发明人： Hidekazu Miyairi , Erika Kato , Kunihiko Suzuki
IPC分类号： H01L21/31 , H01L21/469 , H01L29/49 , H01L29/66 , H01L29/786 , H01L27/12
CPC分类号： H01L29/4908 , H01L27/1214 , H01L27/1288 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： A thin film transistor in which deterioration at initial operation is not likely to be caused and a manufacturing method thereof. A transistor which includes a gate insulating layer at least whose uppermost surface is a silicon nitride layer, a semiconductor layer over the gate insulating layer, and a buffer layer over the semiconductor layer and in which the concentration of nitrogen in the vicinity of an interface between the semiconductor layer and the gate insulating layer, which is in the semiconductor layer is lower than that of the buffer layer and other parts of the semiconductor layer. Such a thin film transistor can be manufactured by exposing the gate insulating layer to an air atmosphere and performing plasma treatment on the gate insulating layer before the semiconductor layer is formed.
摘要翻译： 其中不可能引起初始操作劣化的薄膜晶体管及其制造方法。 一种晶体管，其至少具有栅极绝缘层，其最上表面是氮化硅层，栅极绝缘层上的半导体层，以及半导体层上的缓冲层，其中，在界面附近的氮浓度 半导体层中的半导体层和栅极绝缘层比缓冲层和半导体层的其它部分低。 这样的薄膜晶体管可以通过将栅极绝缘层暴露于空气气氛中，并且在形成半导体层之前对栅极绝缘层进行等离子体处理来制造。
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