Invention Application
- Patent Title: Methods of Forming Dielectric Material-Containing Structures
- Patent Title (中): 形成含介电材料的结构的方法
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Application No.: US13461067Application Date: 2012-05-01
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Publication No.: US20120220098A1Publication Date: 2012-08-30
- Inventor: Noel Rocklein , Chris M. Carlson , Dave Peterson , Cunyu Yang , Praveen Vaidyanathan , Vishwanath Bhat
- Applicant: Noel Rocklein , Chris M. Carlson , Dave Peterson , Cunyu Yang , Praveen Vaidyanathan , Vishwanath Bhat
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/316

Abstract:
Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.
Public/Granted literature
- US08603877B2 Methods of forming dielectric material-containing structures Public/Granted day:2013-12-10
Information query
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