Methods of forming dielectric material-containing structures
    5.
    发明授权
    Methods of forming dielectric material-containing structures 有权
    形成含介电材料结构的方法

    公开(公告)号:US08603877B2

    公开(公告)日:2013-12-10

    申请号:US13461067

    申请日:2012-05-01

    IPC分类号: H01L21/316

    摘要: Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.

    摘要翻译: 一些实施例包括电介质结构。 这些结构包括彼此直接相对的第一和第二部分。 第一部分可以包含第一相和第二相的均匀混合物。 第一相可以具有大于或等于25的介电常数,并且第二相可以具有小于或等于20的介电常数。第二部分可以是完全是具有大于或等于20的介电常数的单一组成, 等于25.一些实施例包括包含上述类型的电介质结构的电气部件,例如电容器和晶体管。 一些实施方案包括形成电介质结构的方法,并且一些实施方案包括形成电组件的方法。

    Methods of forming dielectric material-containing structures
    6.
    发明授权
    Methods of forming dielectric material-containing structures 有权
    形成含介电材料结构的方法

    公开(公告)号:US08187933B2

    公开(公告)日:2012-05-29

    申请号:US12895535

    申请日:2010-09-30

    IPC分类号: H01L27/01

    摘要: Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.

    摘要翻译: 一些实施例包括电介质结构。 这些结构包括彼此直接相对的第一和第二部分。 第一部分可以包含第一相和第二相的均匀混合物。 第一相可以具有大于或等于25的介电常数,并且第二相可以具有小于或等于20的介电常数。第二部分可以是完全是具有大于或等于20的介电常数的单一组成, 等于25.一些实施例包括包含上述类型的电介质结构的电气部件,例如电容器和晶体管。 一些实施方案包括形成电介质结构的方法,并且一些实施方案包括形成电组件的方法。