发明申请
US20120244707A1 METHOD OF CORRECTING MASK PATTERN, COMPUTER PROGRAM PRODUCT, MASK PATTERN CORRECTING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
有权
校正掩模图案，计算机程序产品，掩模图案校正装置的方法和制造半导体器件的方法
- 专利标题： METHOD OF CORRECTING MASK PATTERN, COMPUTER PROGRAM PRODUCT, MASK PATTERN CORRECTING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 校正掩模图案，计算机程序产品，掩模图案校正装置的方法和制造半导体器件的方法
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申请号： US13239019申请日： 2011-09-21
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公开(公告)号： US20120244707A1公开(公告)日： 2012-09-27
- 发明人: Taiga Uno , Toshiya Kotani , Hiromitsu Mashita , Yukiyasu Arisawa
- 申请人： Taiga Uno , Toshiya Kotani , Hiromitsu Mashita , Yukiyasu Arisawa
- 优先权： JP2011-062841 20110322
- 主分类号： G03F1/70
- IPC分类号： G03F1/70 ; H01L21/311 ; G06F17/50
摘要：
In the method of correcting a mask pattern according to the embodiments, a mask pattern correction amount for a reference flare value is calculated as a reference mask correction amount, for every type of patterns within the layout, and a change amount of the mask pattern correction amount corresponding to the change amount of the flare value is calculated as the change amount information. A mask pattern corresponding to the flare value of the pattern is created based on the reference mask correction amount and the change amount information corresponding to the pattern, extracted from the information having the pattern, the reference mask correction amount, and the change amount information correlated with each other, and based on a difference between the flare value of the pattern and the reference flare value.
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