发明申请
US20120280140A1 METHOD AND SYSTEM FOR CONTROLLING CRITICAL DIMENSION AND ROUGHNESS IN RESIST FEATURES
有权
用于控制关键特征的关键尺寸和粗糙度的方法和系统
- 专利标题： METHOD AND SYSTEM FOR CONTROLLING CRITICAL DIMENSION AND ROUGHNESS IN RESIST FEATURES
- 专利标题（中）： 用于控制关键特征的关键尺寸和粗糙度的方法和系统
-
申请号： US13099432申请日： 2011-05-03
-
公开(公告)号： US20120280140A1公开(公告)日： 2012-11-08
- 发明人: Ludovic Godet , Christopher J. Leavitt , Joseph C. Olson , Patrick M. Martin
- 申请人： Ludovic Godet , Christopher J. Leavitt , Joseph C. Olson , Patrick M. Martin
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： B01J19/08
- IPC分类号： B01J19/08 ; H01J27/02
摘要：
A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.