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1.发明授权Method and system for controlling critical dimension and roughness in resist features 有权用于控制抗蚀剂特征的临界尺寸和粗糙度的方法和系统公开(公告)号：US08354655B2
公开(公告)日：2013-01-15
申请号：US13099432
申请日：2011-05-03
IPC分类号： H01J37/32
CPC分类号： G03F7/20 , G03F7/2024 , G03F7/40 , H01J37/3023 , H01J37/3053 , H01J2237/3174 , H01L21/0273
摘要： A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
摘要翻译： 一种处理具有初始线粗糙度和初始临界尺寸的光致抗蚀剂浮雕特征的方法。 该方法可以包括在第一角度范围和第一剂量率的第一曝光中将离子引向光致抗蚀剂，并且被配置为将初始线粗糙度减小到第二线粗糙度。 该方法还可以包括以大于第一剂量率的第二离子剂量率在第二曝光中将离子引向光致抗蚀剂浮雕特征，其中第二离子剂量率被配置为溶胀光致抗蚀剂浮雕特征。
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2.发明申请METHOD AND SYSTEM FOR CONTROLLING CRITICAL DIMENSION AND ROUGHNESS IN RESIST FEATURES 有权用于控制关键特征的关键尺寸和粗糙度的方法和系统公开(公告)号：US20120280140A1
公开(公告)日：2012-11-08
申请号：US13099432
申请日：2011-05-03
CPC分类号： G03F7/20 , G03F7/2024 , G03F7/40 , H01J37/3023 , H01J37/3053 , H01J2237/3174 , H01L21/0273
摘要： A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
摘要翻译： 一种处理具有初始线粗糙度和初始临界尺寸的光致抗蚀剂浮雕特征的方法。 该方法可以包括在第一角度范围和第一剂量率的第一曝光中将离子引向光致抗蚀剂，并且被配置为将初始线粗糙度减小到第二线粗糙度。 该方法还可以包括以大于第一剂量率的第二离子剂量率在第二曝光中将离子引向光致抗蚀剂浮雕特征，其中第二离子剂量率被配置为溶胀光刻胶浮雕特征。
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3.发明申请公开(公告)号：US20130062309A1
公开(公告)日：2013-03-14
申请号：US13228625
申请日：2011-09-09
CPC分类号： H01L21/0273 , G03F7/40 , H01J37/32422
摘要： A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.
摘要翻译： 一种降低设置在基板上的抗蚀剂材料的表面中的开口中的粗糙度的方法，包括产生具有等离子体鞘和其中的离子的等离子体。 该方法还包括使用等离子体护套改性剂修改限定在等离子体和等离子体护套之间的边界的形状，使得面向抗蚀剂材料的边界的一部分不平行于由衬底的表面限定的平面。 该方法还包括在衬底处于第一位置时提供离子的第一次曝光，该第一曝光包括在相对于衬底的表面的角度范围内跨过具有改变形状的边界加速离子的离子。
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4.发明申请METHOD AND SYSTEM FOR MODIFYING PATTERNED PHOTORESIST USING MULTI-STEP ION IMPLANTATION 有权使用多步离子植入修饰图案的方法和系统公开(公告)号：US20120083136A1
公开(公告)日：2012-04-05
申请号：US12896046
申请日：2010-10-01
CPC分类号： H01J37/317 , H01J37/3056 , H01J2237/31796 , H01L21/26586 , H01L21/266
摘要： A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes a first sidewall and a second sidewall opposite the first sidewall, wherein each patterned resist feature comprises a mid frequency line width roughness and a low frequency linewidth roughness. A plurality of ion exposure cycles are performed, wherein each ion exposure cycle comprises providing ions at a tilt angle of about five degrees or larger upon the first sidewall, and providing ions at a tilt angle of about five degrees or larger upon the second sidewall. Upon the performing of the plurality of ion exposure cycles the mid frequency and low frequency linewidth roughness are reduced.
摘要翻译： 一种降低多个图案化抗蚀剂特征中的粗糙度轮廓的方法。 每个图案化的抗蚀剂特征包括第一侧壁和与第一侧壁相对的第二侧壁，其中每个图案化的抗蚀剂特征包括中频线宽粗糙度和低频线宽粗糙度。 执行多个离子曝光循环，其中每个离子曝光循环包括在第一侧壁上以约5度或更大的倾斜角度提供离子，并且在第二侧壁上以约5度或更大的倾斜角提供离子。 在执行多个离子曝光循环时，中频和低频线宽粗糙度减小。
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5.发明授权公开(公告)号：US08974683B2
公开(公告)日：2015-03-10
申请号：US13228625
申请日：2011-09-09
IPC分类号： H01L21/302 , H01L21/027 , H01J37/32 , G03F7/40
CPC分类号： H01L21/0273 , G03F7/40 , H01J37/32422
摘要： A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.
摘要翻译： 一种降低设置在基板上的抗蚀剂材料的表面中的开口中的粗糙度的方法，包括产生具有等离子体鞘和其中的离子的等离子体。 该方法还包括使用等离子体护套改性剂修改限定在等离子体和等离子体护套之间的边界的形状，使得面向抗蚀剂材料的边界的一部分不平行于由衬底的表面限定的平面。 该方法还包括在衬底处于第一位置时提供离子的第一次曝光，该第一曝光包括在相对于衬底的表面的角度范围内跨过具有改变形状的边界加速离子的离子。
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6.发明授权Method and system for modifying patterned photoresist using multi-step ion implantation 有权使用多步离子注入修饰图案化光刻胶的方法和系统公开(公告)号：US08133804B1
公开(公告)日：2012-03-13
申请号：US12896046
申请日：2010-10-01
IPC分类号： H01L21/425
CPC分类号： H01J37/317 , H01J37/3056 , H01J2237/31796 , H01L21/26586 , H01L21/266
摘要： A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes a first sidewall and a second sidewall opposite the first sidewall, wherein each patterned resist feature comprises a mid frequency line width roughness and a low frequency linewidth roughness. A plurality of ion exposure cycles are performed, wherein each ion exposure cycle comprises providing ions at a tilt angle of about five degrees or larger upon the first sidewall, and providing ions at a tilt angle of about five degrees or larger upon the second sidewall. Upon the performing of the plurality of ion exposure cycles the mid frequency and low frequency linewidth roughness are reduced.
摘要翻译： 一种降低多个图案化抗蚀剂特征中的粗糙度轮廓的方法。 每个图案化的抗蚀剂特征包括第一侧壁和与第一侧壁相对的第二侧壁，其中每个图案化的抗蚀剂特征包括中频线宽粗糙度和低频线宽粗糙度。 执行多个离子曝光循环，其中每个离子曝光循环包括在第一侧壁上以约5度或更大的倾斜角度提供离子，并且在第二侧壁上以约5度或更大的倾斜角提供离子。 在执行多个离子曝光循环时，中频和低频线宽粗糙度减小。
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公开(公告)号：US08188445B2
公开(公告)日：2012-05-29
申请号：US12848354
申请日：2010-08-02
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/083 , H01J2237/0835 , Y10S438/961
摘要： An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
摘要翻译： 离子源包括具有提取孔的电弧室和位于电弧室中的等离子体鞘调制器。 等离子体鞘调制器被配置为控制靠近提取孔的等离子体和等离子体鞘之间的边界的形状，其中等离子体鞘调制器包括半导体。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。
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公开(公告)号：US20110124186A1
公开(公告)日：2011-05-26
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
IPC分类号： H01L21/265 , G21K5/10
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
摘要翻译： 等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。 该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。 该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。 该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。
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公开(公告)号：US08461030B2
公开(公告)日：2013-06-11
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
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公开(公告)号：US20110186749A1
公开(公告)日：2011-08-04
申请号：US12848354
申请日：2010-08-02
IPC分类号： H01J27/08
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/083 , H01J2237/0835 , Y10S438/961
摘要： An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
摘要翻译： 离子源包括具有提取孔的电弧室和位于电弧室中的等离子体鞘调制器。 等离子体鞘调制器被配置为控制靠近提取孔的等离子体和等离子体鞘之间的边界的形状，其中等离子体鞘调制器包括半导体。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。
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