中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

86 records (took 0.022 seconds)

    Ion beam tuning
    1.
    发明授权
    Ion beam tuning 有权
    离子束调谐

    公开(公告)号：US08330125B2

    公开(公告)日：2012-12-11

    申请号：US12887068

    申请日：2010-09-21

    Applicant: Shengwu Chang ,  Joseph C. Olson ,  Frank Sinclair ,  Matthew P. McClellan

    Inventor： Shengwu Chang ,  Joseph C. Olson ,  Frank Sinclair ,  Matthew P. McClellan

    IPC: H01J37/10

    CPC classification number: H01J37/3171 ,  H01J37/21 ,  H01J2237/216 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

    Abstract: A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.

    Abstract translation: 束线离子注入机包括被配置为产生离子束的离子源，扫描器，被配置为扫描离子束以产生具有从扫描原点发散的轨迹的扫描离子束;以及聚焦元件，其具有位于 扫描器被配置为将离子束聚焦到扫描原点处的焦点。 离子束调谐的方法包括产生离子束，将离子束聚焦到位于扫描原点的焦点，并扫描离子束以产生具有与扫描原点分离的轨迹的扫描离子束。

    Ion source
    2.
    发明授权
    Ion source 有权
    离子源

    公开(公告)号：US08188445B2

    公开(公告)日：2012-05-29

    申请号：US12848354

    申请日：2010-08-02

    Applicant: Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh

    Inventor： Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh

    IPC: H01J49/10 ,  H01J37/08 ,  H01J23/06

    CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/083 ,  H01J2237/0835 ,  Y10S438/961

    Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

    Abstract translation: 离子源包括具有提取孔的电弧室和位于电弧室中的等离子体鞘调制器。 等离子体鞘调制器被配置为控制靠近提取孔的等离子体和等离子体鞘之间的边界的形状，其中等离子体鞘调制器包括半导体。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。

    Apparatus for measuring beam characteristics and a method thereof
    3.
    发明授权
    Apparatus for measuring beam characteristics and a method thereof 有权
    用于测量光束特性的装置及其方法

    公开(公告)号：US08097866B2

    公开(公告)日：2012-01-17

    申请号：US12031643

    申请日：2008-02-14

    Applicant: Joseph C. Olson ,  Atul Gupta

    Inventor： Joseph C. Olson ,  Atul Gupta

    IPC: G01T1/00

    CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24542

    Abstract: An apparatus and a method for detecting particle beam characteristics are disclosed. In one embodiment, the apparatus may have a body including a first end and second end and at least one detector between the first and second ends. The apparatus may have a transparent state where a portion of the particles entering the apparatus may pass through the apparatus. The apparatus may also have a minimum transparency state where substantially all of the particles entering the apparatus may be prevented from passing through the apparatus and detected. Different transparency state may be achieved by rotating the apparatus or the detector contained therein. With the apparatus, it is possible to detect the beam properties such as the beam intensity, angle, parallelism, and a distribution of the particles in a particle beam.

    Abstract translation: 公开了一种用于检测粒子束特性的装置和方法。 在一个实施例中，设备可以具有包括第一端和第二端的主体以及在第一端和第二端之间的至少一个检测器。 该设备可以具有透明状态，其中进入设备的一部分颗粒可以通过设备。 该装置还可以具有最小的透明度状态，其中可以防止进入装置的基本上所有的颗粒通过装置并被检测。 可以通过旋转装置或其中包含的检测器来实现不同的透明度状态。 利用该装置，可以检测诸如光束强度，角度，平行度以及颗粒束中颗粒分布的光束特性。

    Technique for ion beam angle spread control
    6.
    发明授权
    Technique for ion beam angle spread control 有权
    离子束角扩散控制技术

    公开(公告)号：US07868305B2

    公开(公告)日：2011-01-11

    申请号：US11145949

    申请日：2005-06-07

    Applicant: Atul Gupta ,  Joseph C. Olson

    Inventor： Atul Gupta ,  Joseph C. Olson

    IPC: H01J37/302

    CPC classification number: H01J37/304 ,  H01J37/1477 ,  H01J37/3171 ,  H01J2237/1507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31703 ,  H01L21/26586

    Abstract: A technique for ion beam angle spread control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles, thereby exposing the substrate surface to a controlled spread of ion beam incident angles.

    Abstract translation: 公开了一种用于离子束角度扩展控制的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于离子束角度扩展控制的方法。 该方法可以包括以两个或更多个不同的入射角度在衬底表面处引导一个或多个离子束，从而将衬底表面暴露于受控的离子束入射角扩散。

    Technique for improving ion implantation throughput and dose uniformity
    7.
    发明授权
    Technique for improving ion implantation throughput and dose uniformity 有权
    提高离子注入量和剂量均匀性的技术

    公开(公告)号：US07683347B2

    公开(公告)日：2010-03-23

    申请号：US11537050

    申请日：2006-09-29

    Applicant: Atul Gupta ,  Anthony Renau ,  Donna Smatlak ,  Joseph C. Olson

    Inventor： Atul Gupta ,  Anthony Renau ,  Donna Smatlak ,  Joseph C. Olson

    IPC: H01J37/317 ,  H01L21/265

    CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J37/304 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30488 ,  H01J2237/31703

    Abstract: A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.

    Abstract translation: 公开了一种改善离子注入通量和剂量均匀性的技术。 在一个示例性实施例中，用于改善离子注入生产量和剂量均匀性的方法可包括测量离子束中的离子束密度分布。 该方法还可以包括计算由扫描速度分布导致的工件的预定区域上的离子剂量分布，其中扫描速度分布包括第一组分和第二组分，其控制离子束和工件之间的相对运动 在第一方向和第二方向上，并且其中所述离子剂量分布至少部分地基于所述离子束密度分布。 该方法还可以包括调整扫描速度分布的第一分量和第二分量中的至少一个，以在工件的预定区域中实现期望的离子剂量分布。

    Method of determining angle misalignment in beam line ion implanters
    8.
    发明授权
    Method of determining angle misalignment in beam line ion implanters 有权
    确定梁线离子注入机中角度偏差的方法

    公开(公告)号：US07642529B2

    公开(公告)日：2010-01-05

    申请号：US11541373

    申请日：2006-09-29

    Applicant: Atul Gupta ,  Joseph C. Olson

    Inventor： Atul Gupta ,  Joseph C. Olson

    IPC: H01J37/317

    CPC classification number: H01L22/14 ,  H01J37/1471 ,  H01J37/3171 ,  H01J2237/1501 ,  H01J2237/24528 ,  H01J2237/24535 ,  H01J2237/24578 ,  H01J2237/3045 ,  H01J2237/31703

    Abstract: A method includes directing an ion beam at a plurality of differing incident angles with respect to a target surface of a substrate to implant ions into a plurality of portions of the substrate, wherein each one of the plurality of differing incident angles is associated with a different one of the plurality of portions, measuring angle sensitive data from each of the plurality of portions of the substrate, and determining an angle misalignment between the target surface and the ion beam incident on the target surface from the angle sensitive data. A method of determining a substrate miscut is also provided.

    Abstract translation: 一种方法包括将离子束相对于衬底的目标表面以多个不同的入射角引导，以将离子注入到衬底的多个部分中，其中多个不同入射角中的每一个与不同的入射角相关联 多个部分中的一个，测量来自基板的多个部分中的每个部分的角度敏感数据，以及从角度敏感数据确定入射到目标表面上的目标表面和离子束之间的角度偏移。 还提供了确定衬底杂交的方法。

    Ion implantation device with a dual pumping mode and method thereof
    9.
    发明授权
    Ion implantation device with a dual pumping mode and method thereof 有权
    具有双泵浦模式的离子注入装置及其方法

    公开(公告)号：US07622722B2

    公开(公告)日：2009-11-24

    申请号：US11866099

    申请日：2007-10-02

    Applicant: Jonathan Gerald England ,  Christopher R. Hatem ,  Jay Thomas Scheuer ,  Joseph C. Olson

    Inventor： Jonathan Gerald England ,  Christopher R. Hatem ,  Jay Thomas Scheuer ,  Joseph C. Olson

    IPC: H01J49/10 ,  H01J49/24

    CPC classification number: H01J27/022 ,  H01J37/08 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/182

    Abstract: An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.

    Abstract translation: 公开了一种用于生产原子或分子离子束的双泵浦模式及其方法的离子注入装置。 在一个特定的示例性实施例中，提供离子注入装置，用于控制对应于正在产生的离子束种类的离子束源壳体内的压力。 离子注入装置可以包括离子束源壳体，其包括用于离子束产生的多个物质。 还可以包括泵送部分以从离子束源壳体排出气体。 可以进一步包括控制器，以根据对应于用于离子束产生的多种物质的种类的泵送参数来控制泵送部分。

Patent Agency Ranking