发明申请
- 专利标题： HIGH VOLTAGE RESISTOR WITH BIASED-WELL
- 专利标题（中）： 高压电阻器
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申请号： US13100714申请日： 2011-05-04
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公开(公告)号： US20120280361A1公开(公告)日： 2012-11-08
- 发明人: Ru-Yi Su , Fu-Chih Yang , Chun Lin Tsai , Chih-Chang Cheng , Ruey-Hsin Liu
- 申请人： Ru-Yi Su , Fu-Chih Yang , Chun Lin Tsai , Chih-Chang Cheng , Ruey-Hsin Liu
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/8605
- IPC分类号： H01L29/8605 ; H01L21/02
摘要：
Provided is a high voltage semiconductor device. The semiconductor device includes a doped well located in a substrate that is oppositely doped. The semiconductor device includes a dielectric structure located on the doped well. A portion of the doped well adjacent the dielectric structure has a higher doping concentration than a remaining portion of the doped well. The semiconductor device includes an elongate polysilicon structure located on the dielectric structure. The elongate polysilicon structure has a length L. The portion of the doped well adjacent the dielectric structure is electrically coupled to a segment of the elongate polysilicon structure that is located away from a midpoint of the elongate polysilicon structure by a predetermined distance that is measured along the elongate polysilicon structure. The predetermined distance is in a range from about 0*L to about 0.1*L.
公开/授权文献
- US08786050B2 High voltage resistor with biased-well 公开/授权日：2014-07-22
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