Invention Application
- Patent Title: HIGH-K METAL GATE DEVICE
- Patent Title (中): 高K金属门装置
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Application No.: US13110922Application Date: 2011-05-19
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Publication No.: US20120292719A1Publication Date: 2012-11-22
- Inventor: Young Way TEH , Michael V. AQUILINO , Arifuzzaman (Arif) SHEIKH , Yun Ling TAN , Hao ZHANG , Deleep R. NAIR , Jinghong H. (John) LI
- Applicant: Young Way TEH , Michael V. AQUILINO , Arifuzzaman (Arif) SHEIKH , Yun Ling TAN , Hao ZHANG , Deleep R. NAIR , Jinghong H. (John) LI
- Applicant Address: US NY New York SG Singapore
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: US NY New York SG Singapore
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L21/28
Abstract:
A device includes a substrate with a device region surrounded by an isolation region, in which the device region includes edge portions along a width of the device region and a central portion. The device further includes a gate layer disposed on the substrate over the device region, in which the gate layer includes a graded thickness in which the gate layer at edge portions of the device region has a thickness TE that is different from a thickness TC at the central portion of the device region.
Public/Granted literature
- US08853796B2 High-K metal gate device Public/Granted day:2014-10-07
Information query
IPC分类:
