发明申请
- 专利标题： HIGH VOLTAGE RESISTANCE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A HIGH VOLTAGE RESISTANCE SEMICONDUCTOR DEVICE
- 专利标题（中）： 高电压半导体器件及制造高电压半导体器件的方法
-
申请号： US13111563申请日： 2011-05-19
-
公开(公告)号： US20120292740A1公开(公告)日： 2012-11-22
- 发明人: Chen-Yuan Lin , Cheng-Chi Lin , Shih-Chin Lien , Chin-Pen Yeh
- 申请人： Chen-Yuan Lin , Cheng-Chi Lin , Shih-Chin Lien , Chin-Pen Yeh
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L21/02
摘要：
A semiconductor device comprises a semiconductor substrate, a lateral semiconductor diode, a field insulation structure, and a polysilicon resistor. The diode is formed in a surface region of the semiconductor substrate, and includes a cathode electrode and an anode electrode. The field insulation structure is disposed between the cathode and anode electrodes. The polysilicon resistor is formed over the field insulation structure, and between the cathode and anode electrodes. The polysilicon resistor is electrically connected to the cathode electrode, and electrically insulated from the anode electrode.
信息查询
IPC分类:
