发明申请
US20120295399A1 OXIDE-BASED THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ZINC OXIDE ETCHANT, AND A METHOD OF FORMING THE SAME
审中-公开
基于氧化物的薄膜晶体管，其制造方法，氧化锌蚀刻剂及其形成方法
- 专利标题： OXIDE-BASED THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ZINC OXIDE ETCHANT, AND A METHOD OF FORMING THE SAME
- 专利标题（中）： 基于氧化物的薄膜晶体管，其制造方法，氧化锌蚀刻剂及其形成方法
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申请号： US13559959申请日： 2012-07-27
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公开(公告)号： US20120295399A1公开(公告)日： 2012-11-22
- 发明人: Chang-jung KIM , Young-soo Park , Eun-ha Lee , Jae-chul Park
- 申请人： Chang-jung KIM , Young-soo Park , Eun-ha Lee , Jae-chul Park
- 优先权： KR10-2007-0061875 20070622
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; C09K13/06 ; C09K13/08 ; H01L21/36
摘要：
Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.
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