发明申请
- 专利标题： SEMICONDUCTOR DEVICE HAVING SOI SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 具有SOI衬底的半导体器件及其制造方法
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申请号： US13546040申请日： 2012-07-11
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公开(公告)号： US20120302036A1公开(公告)日： 2012-11-29
- 发明人: Masakiyo Sumitomo , Makoto Asai , Nozomu Akagi , Yasuhiro Kitamura , Hiroki Nakamura , Tetsuo Fujii
- 申请人： Masakiyo Sumitomo , Makoto Asai , Nozomu Akagi , Yasuhiro Kitamura , Hiroki Nakamura , Tetsuo Fujii
- 申请人地址： JP Kariya-city
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city
- 优先权： JP2007-300364 20071120; JP2008-236452 20080916
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.