发明申请
US20120305989A1 METHOD TO PREVENT SURFACE DECOMPOSITION OF III-V COMPOUND SEMICONDUCTORS
有权
防止III-V化合物半导体表面分解的方法
- 专利标题： METHOD TO PREVENT SURFACE DECOMPOSITION OF III-V COMPOUND SEMICONDUCTORS
- 专利标题（中）： 防止III-V化合物半导体表面分解的方法
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申请号： US13570989申请日： 2012-08-09
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公开(公告)号： US20120305989A1公开(公告)日： 2012-12-06
- 发明人: Joel P. de Souza , Keith E. Fogel , Edward W. Kiewra , Steven J. Koester , Christopher C. Parks , Devendra K. Sadana , Shahab Siddiqui
- 申请人： Joel P. de Souza , Keith E. Fogel , Edward W. Kiewra , Steven J. Koester , Christopher C. Parks , Devendra K. Sadana , Shahab Siddiqui
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor.
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