发明申请
- 专利标题: TRANSISTOR WITH CONTROLLABLE COMPENSATION REGIONS
- 专利标题(中): 具有可控制补偿区的晶体管
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申请号: US13484490申请日: 2012-05-31
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公开(公告)号: US20120305993A1公开(公告)日: 2012-12-06
- 发明人: Armin Willmeroth , Franz Hirler , Hans Weber , Michael Treu
- 申请人: Armin Willmeroth , Franz Hirler , Hans Weber , Michael Treu
- 申请人地址: AT Villach
- 专利权人: INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人: INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址: AT Villach
- 主分类号: H01L27/088
- IPC分类号: H01L27/088
摘要:
A semiconductor device includes a gate terminal, at least one control terminal and first and second load terminals and at least one device cell. The at least one device cell includes a MOSFET device having a load path and a control terminal, the control terminal coupled to the gate terminal and a JFET device having a load path and a control terminal, the load path connected in series with the load path of the MOSFET device between the load terminals. The at least one device cell further includes a first coupling transistor having a load path and a control terminal, the load path coupled between the control terminal of the JFET device and one of the source terminal and the gate terminal, and the control terminal coupled to the at least one control terminal of the transistor device.
公开/授权文献
- US08803205B2 Transistor with controllable compensation regions 公开/授权日:2014-08-12
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