发明申请
US20120313482A1 METHOD OF FORMING A VDF OLIGOMER OR CO-OLIGOMER FILM ON A SUBSTRATE AND AN ELECTRICAL DEVICE COMPRISING THE VDF OLIGOMER OR CO-OLIGOMER FILM ON THE SUBSTRATE
有权
在底材上形成VDF低聚物或共低聚物膜的方法以及包含基底上的VDF低聚物或共低聚物膜的电气设备
- 专利标题： METHOD OF FORMING A VDF OLIGOMER OR CO-OLIGOMER FILM ON A SUBSTRATE AND AN ELECTRICAL DEVICE COMPRISING THE VDF OLIGOMER OR CO-OLIGOMER FILM ON THE SUBSTRATE
- 专利标题（中）： 在底材上形成VDF低聚物或共低聚物膜的方法以及包含基底上的VDF低聚物或共低聚物膜的电气设备
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申请号： US13518866申请日： 2009-12-23
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公开(公告)号： US20120313482A1公开(公告)日： 2012-12-13
- 发明人: Kui Yao , Shuting Chen , Eng Hock Francis Tay
- 申请人： Kui Yao , Shuting Chen , Eng Hock Francis Tay
- 国际申请： PCT/SG09/00494 WO 20091223
- 主分类号： B05D7/24
- IPC分类号： B05D7/24 ; B05D3/12 ; B05D5/12 ; H01L41/22 ; H01L41/00 ; H01L43/10 ; H01L43/12 ; H01G4/00 ; G01J5/00 ; B05D3/02 ; H01G13/00
摘要：
A method of forming a vinylidene fluoride (VDF) oligomer or co-oligomer film on a substrate is disclosed. The method comprises forming a VDF oligomer or co-oligomer precursor solution; depositing the VDF oligomer or co-oligomer precursor solution onto the substrate to form a preliminary VDF oligomer or co-oligomer film on the substrate; and applying uniaxial pressure on the preliminary VDF oligomer or co-oligomer film and the substrate at an elevated temperature to form the VDF oligomer or co-oligomer film on the substrate. The substrate may comprise a metal surface which may be used as a bottom electrode and a top electrode may be deposited on the VDF oligomer or co- oligomer film The VDF oligomer or co-oligomer film, the bottom electrode on the substrate and the top electrode on the VDF oligomer or co-oligomer film form an electrical device.
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