Invention Application
- Patent Title: SEMICONDUCTOR NANOCRYSTALS HETEROSTRUCTURES
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Application No.: US13594719Application Date: 2012-08-24
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Publication No.: US20120319054A1Publication Date: 2012-12-20
- Inventor: Sungjee Kim , Moungi G. Bawendi
- Applicant: Sungjee Kim , Moungi G. Bawendi
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Main IPC: H01B1/00
- IPC: H01B1/00 ; B82Y30/00
Abstract:
A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
Public/Granted literature
- US09410959B2 Devices comprising coated semiconductor nanocrystal heterostructures Public/Granted day:2016-08-09
Information query
