发明申请
- 专利标题： LARGE DIMENSION DEVICE AND METHOD OF MANUFACTURING SAME IN GATE LAST PROCESS
- 专利标题（中）： 大尺寸装置及其在门过程中的制造方法
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申请号： US13162453申请日： 2011-06-16
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公开(公告)号： US20120319180A1公开(公告)日： 2012-12-20
- 发明人: Harry-Hak-Lay Chuang , Ming Zhu
- 申请人： Harry-Hak-Lay Chuang , Ming Zhu
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/28
摘要：
An integrated circuit device and methods of manufacturing the same are disclosed. In an example, integrated circuit device includes a gate structure disposed over a substrate; a source region and a drain region disposed in the substrate, wherein the gate structure interposes the source region and the drain region; and at least one post feature embedded in the gate structure.
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