发明申请
- 专利标题: METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE
- 专利标题(中): 制造半导体发光器件的方法
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申请号: US13493342申请日: 2012-06-11
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公开(公告)号: US20120322191A1公开(公告)日: 2012-12-20
- 发明人: Jong Hyun Lee , Dong Ju Lee , Young Sun Kim
- 申请人: Jong Hyun Lee , Dong Ju Lee , Young Sun Kim
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 优先权: KR10-2011-0057254 20110614
- 主分类号: H01L33/06
- IPC分类号: H01L33/06
摘要:
There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.
公开/授权文献
- US08709839B2 Method of fabricating semiconductor light emitting device 公开/授权日:2014-04-29