公开(公告)号：US20130026446A1

公开(公告)日：2013-01-31

申请号：US13557915

申请日：2012-07-25

申请人： Sang Heon HAN ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Sang Heon HAN ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/04 ,  H01L33/60

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域 第一导电型半导体层。

公开(公告)号：US08709839B2

公开(公告)日：2014-04-29

申请号：US13493342

申请日：2012-06-11

申请人： Jong Hyun Lee ,  Dong Ju Lee ,  Young Sun Kim

发明人： Jong Hyun Lee ,  Dong Ju Lee ,  Young Sun Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079

摘要： There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.

摘要翻译： 提供一种制造半导体发光器件的方法，包括：在生长衬底上形成具有多个纳米结构的牺牲层; 形成保护层以覆盖牺牲层; 通过允许第一导电半导体层，有源层和第二导电半导体层在保护层上顺序生长来形成发光结构; 蚀刻保护层以暴露纳米结构; 并且通过蚀刻暴露的纳米结构将发光结构与生长衬底分离，从而可以防止发光结构在其分离时的损坏和劣化。

公开(公告)号：US08575593B2

公开(公告)日：2013-11-05

申请号：US13557915

申请日：2012-07-25

申请人： Sang Heon Han ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Sang Heon Han ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/32

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域 第一导电型半导体层。

公开(公告)号：US20120322191A1

公开(公告)日：2012-12-20

申请号：US13493342

申请日：2012-06-11

申请人： Jong Hyun Lee ,  Dong Ju Lee ,  Young Sun Kim

发明人： Jong Hyun Lee ,  Dong Ju Lee ,  Young Sun Kim

IPC分类号： H01L33/06

CPC分类号： H01L33/0079

摘要： There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.

摘要翻译： 提供一种制造半导体发光器件的方法，包括：在生长衬底上形成具有多个纳米结构的牺牲层; 形成保护层以覆盖牺牲层; 通过允许第一导电半导体层，有源层和第二导电半导体层在保护层上顺序生长来形成发光结构; 蚀刻保护层以暴露纳米结构; 并且通过蚀刻暴露的纳米结构将发光结构与生长衬底分离，从而可以防止发光结构在其分离时的损坏和劣化。

公开(公告)号：US20130009192A1

公开(公告)日：2013-01-10

申请号：US13368043

申请日：2012-02-07

申请人： Hyun Wook Shim ,  Dong Ju Lee ,  Dong Ik Shin ,  Young Sun Kim ,  Makoto Asai ,  Yu Ri Sohn

发明人： Hyun Wook Shim ,  Dong Ju Lee ,  Dong Ik Shin ,  Young Sun Kim ,  Makoto Asai ,  Yu Ri Sohn

IPC分类号： H01L33/30

CPC分类号： H01L33/025 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40

摘要： Provided is a nitride semiconductor light emitting device including p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer formed therebetween. A contact layer is positioned between the p-type nitride semiconductor layer and a p-side electrode. The contact layer includes a first p-type nitride layer having a first impurity concentration to form ohmic contact with the p-side electrode and a second p-type nitride layer having a second impurity concentration, the second impurity concentration having a concentration lower than the first impurity concentration.

摘要翻译： 提供了包括p型氮化物半导体层，n型氮化物半导体层和在它们之间形成的有源层的氮化物半导体发光器件。 接触层位于p型氮化物半导体层和p侧电极之间。 接触层包括具有第一杂质浓度以与p侧电极欧姆接触的第一p型氮化物层和具有第二杂质浓度的第二p型氮化物层，第二杂质浓度的浓度低于 第一杂质浓度。

公开(公告)号：US20120326121A1

公开(公告)日：2012-12-27

申请号：US13603192

申请日：2012-09-04

申请人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/04

CPC分类号： C23C16/54 ,  C23C16/45563 ,  C30B23/02 ,  C30B25/14 ,  C30B29/40 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

摘要翻译： 提供了蒸镀系统，制造发光器件的方法和发光器件。 根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分布器的第一腔室，其沿平行于设置在第一基座上的衬底的方向排放气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。 当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。 此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

公开(公告)号：US08685772B2

公开(公告)日：2014-04-01

申请号：US13344298

申请日：2012-01-05

申请人： Dong Ju Lee ,  Heon Ho Lee ,  Hyun Wook Shim ,  Young Sun Kim

发明人： Dong Ju Lee ,  Heon Ho Lee ,  Hyun Wook Shim ,  Young Sun Kim

IPC分类号： H01L33/02

CPC分类号： H01L33/0075 ,  H01L33/007 ,  H01L33/32

摘要： There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

摘要翻译： 提供了一种制造发光二极管的方法和由其制造的发光二极管。 该方法包括在第一反应室中顺序地在衬底上生长第一导电型氮化物半导体层和未掺杂的氮化物半导体层; 将具有第一导电型氮化物半导体层和其上生长的未掺杂氮化物半导体层的衬底转移到第二反应室; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层; 在附加的第一导电型氮化物半导体层上生长活性层; 以及在所述有源层上生长第二导电型氮化物半导体层。

公开(公告)号：US20110198667A1

公开(公告)日：2011-08-18

申请号：US12940399

申请日：2010-11-05

申请人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/30 ,  H01L33/00 ,  H01L33/02

CPC分类号： C23C16/54 ,  C23C16/45563 ,  C30B23/02 ,  C30B25/14 ,  C30B29/40 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

摘要翻译： 提供了蒸镀系统，制造发光器件的方法和发光器件。 根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分布器的第一腔室，其沿平行于设置在第一基座上的衬底的方向排放气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。 当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。 此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

公开(公告)号：US20130020553A1

公开(公告)日：2013-01-24

申请号：US13553344

申请日：2012-07-19

申请人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

发明人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32

摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.

摘要翻译： 提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率​​减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。

公开(公告)号：US08779412B2

公开(公告)日：2014-07-15

申请号：US13553344

申请日：2012-07-19

申请人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

发明人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

IPC分类号： H01L33/00 ,  H01L29/06

CPC分类号： H01L33/06 ,  H01L33/32

摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.

摘要翻译： 提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率​​减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。