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公开(公告)号：US20130026446A1
公开(公告)日：2013-01-31
申请号：US13557915
申请日：2012-07-25
申请人： Sang Heon HAN , Jong Hyun Lee , Jin Young Lim , Dong Ju Lee , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
发明人： Sang Heon HAN , Jong Hyun Lee , Jin Young Lim , Dong Ju Lee , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.
摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域 第一导电型半导体层。
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公开(公告)号：US08575593B2
公开(公告)日：2013-11-05
申请号：US13557915
申请日：2012-07-25
申请人： Sang Heon Han , Jong Hyun Lee , Jin Young Lim , Dong Ju Lee , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
发明人： Sang Heon Han , Jong Hyun Lee , Jin Young Lim , Dong Ju Lee , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
IPC分类号： H01L33/32
摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.
摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域 第一导电型半导体层。
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公开(公告)号：US20120322191A1
公开(公告)日：2012-12-20
申请号：US13493342
申请日：2012-06-11
申请人： Jong Hyun Lee , Dong Ju Lee , Young Sun Kim
发明人： Jong Hyun Lee , Dong Ju Lee , Young Sun Kim
IPC分类号： H01L33/06
CPC分类号： H01L33/0079
摘要： There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.
摘要翻译： 提供一种制造半导体发光器件的方法，包括：在生长衬底上形成具有多个纳米结构的牺牲层; 形成保护层以覆盖牺牲层; 通过允许第一导电半导体层，有源层和第二导电半导体层在保护层上顺序生长来形成发光结构; 蚀刻保护层以暴露纳米结构; 并且通过蚀刻暴露的纳米结构将发光结构与生长衬底分离，从而可以防止发光结构在其分离时的损坏和劣化。
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公开(公告)号：US08709839B2
公开(公告)日：2014-04-29
申请号：US13493342
申请日：2012-06-11
申请人： Jong Hyun Lee , Dong Ju Lee , Young Sun Kim
发明人： Jong Hyun Lee , Dong Ju Lee , Young Sun Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079
摘要： There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.
摘要翻译： 提供一种制造半导体发光器件的方法，包括：在生长衬底上形成具有多个纳米结构的牺牲层; 形成保护层以覆盖牺牲层; 通过允许第一导电半导体层，有源层和第二导电半导体层在保护层上顺序生长来形成发光结构; 蚀刻保护层以暴露纳米结构; 并且通过蚀刻暴露的纳米结构将发光结构与生长衬底分离，从而可以防止发光结构在其分离时的损坏和劣化。
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公开(公告)号：US20130020553A1
公开(公告)日：2013-01-24
申请号：US13553344
申请日：2012-07-19
申请人： Sang Heon Han , Do Young Rhee , Jong Hyun Lee , Jin Young Lim , Young Sun Kim
发明人： Sang Heon Han , Do Young Rhee , Jong Hyun Lee , Jin Young Lim , Young Sun Kim
IPC分类号： H01L33/04
摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.
摘要翻译： 提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。
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公开(公告)号：US08779412B2
公开(公告)日：2014-07-15
申请号：US13553344
申请日：2012-07-19
申请人： Sang Heon Han , Do Young Rhee , Jong Hyun Lee , Jin Young Lim , Young Sun Kim
发明人： Sang Heon Han , Do Young Rhee , Jong Hyun Lee , Jin Young Lim , Young Sun Kim
摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.
摘要翻译： 提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。
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公开(公告)号：US09107240B2
公开(公告)日：2015-08-11
申请号：US13811115
申请日：2011-08-04
申请人： Jong Hyun Lee
发明人： Jong Hyun Lee
CPC分类号： H04L5/14 , H03F1/0205 , H03F1/0261 , H03F1/30 , H03F3/189 , H03F3/19 , H03F3/24 , H03F2200/18 , H03F2200/294 , H03F2200/408 , H03F2200/451 , H03F2200/468 , H04W88/06
摘要： An amplifier and an amplifying method are provided. The amplifier includes: an amplifying unit amplifying and transferring a transmission target signal to a TDD switch; the TDD switch transferring a signal received from the amplifying unit to a filter unit when the amplifier operates in a TDD mode, and transferring a signal received from the filter unit to a duplex mode selection switch; the duplex mode selection switch transferring a signal received from the filter unit to a receiving side; and a controller controlling the duplex mode selection switch to transfer the signal received from the filter unit to the receiving side without passing through the TDD switch when the received duplex mode selection signal is a FDD mode selection signal.
摘要翻译： 提供放大器和放大方法。 放大器包括：放大单元，放大并将发送目标信号传送到TDD开关; 当放大器以TDD模式工作时，TDD开关将从放大单元接收的信号传送到滤波器单元，并将从滤波器单元接收的信号传送到双工模式选择开关; 所述双工模式选择开关将从所述滤波器单元接收到的信号传送到接收侧; 以及当所接收的双工模式选择信号是FDD模式选择信号时，控制双工模式选择开关以将从滤波器单元接收的信号传送到接收侧而不经过TDD开关的控制器。
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公开(公告)号：US09037756B2
公开(公告)日：2015-05-19
申请号：US13413167
申请日：2012-03-06
申请人： Jong Hyun Lee
发明人： Jong Hyun Lee
CPC分类号： H02J7/0044 , G06F1/26 , G06F11/3485 , G06F13/382 , H02J3/008 , H02J7/0008 , H02J7/0027 , H02J7/0047 , H04M1/0274 , H04M1/72527
摘要： A mobile terminal and an interface method thereof for connecting external devices, such as an adapter, a Universal Serial Bus (USB) cable, a docking station, an accessory, and the like, to the mobile terminal are provided. The mobile terminal includes a battery, a connector including a pin for data communication and first and second power pins for charging the battery, a memory for storing a reference voltage indicating a dedicated adapter of the battery, and a controller for receiving a voltage input from the first and second power pins, for recognizing an external device connected with the connector as the dedicated adapter when a voltage input from the pin for data communication is the reference voltage, and for charging the battery with power input to the first and second power pins.
摘要翻译： 提供了一种用于将诸如适配器，通用串行总线（USB）电缆，对接站，附件等的外部设备连接到移动终端的移动终端及其接口方法。 移动终端包括电池，包括用于数据通信的引脚和用于对电池充电的第一和第二电源引脚的连接器，用于存储指示电池的专用适配器的参考电压的存储器，以及用于接收来自电池的电压输入的控制器 所述第一和第二电源引脚用于当从所述用于数据通信的引脚的电压输入为参考电压时识别与所述连接器连接的外部设备作为所述专用适配器，并且用于对所述电池充电以对所述第一和第二电源引脚的电力输入进行充电 。
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公开(公告)号：US08885647B2
公开(公告)日：2014-11-11
申请号：US13586915
申请日：2012-08-16
申请人： Chang Gyu Lim , Tae Yeon Kim , Seung Hyun Yoon , Ho Young Song , Jong Hyun Lee
发明人： Chang Gyu Lim , Tae Yeon Kim , Seung Hyun Yoon , Ho Young Song , Jong Hyun Lee
IPC分类号： H04L12/26
CPC分类号： H04L63/12
摘要： Disclosed are an apparatus and a method for swapping headers for authenticating policy based domains and tracing paths at the time of high-reliable data plane transmission. The method includes receiving packets forwarded through predetermined paths, confirming whether the received packets are normal packets, determining whether the path identification information corresponding to the paths of the received packets is present in a header information storage unit of a domain receiving the packets, swapping the headers included in the packets to swapping headers of the header information storage unit by using the identification information if it is determined that the path identification information is present, and correcting the path tracing information. By this configuration, degradation in data plane performance due to the lengths of headers can be solved.
摘要翻译： 公开了一种用于在高可靠性数据平面传输时交换用于认证基于策略的域和跟踪路径的报头的装置和方法。 该方法包括接收通过预定路径转发的报文，确认接收到的报文是否为普通报文，确定接收报文的路径的路径识别信息是否存在于接收报文的报文头信息存储单元中， 如果确定路径识别信息存在，则通过使用识别信息来包括在分组中的头部以交换头信息存储单元的头部，并且校正路径跟踪信息。 通过这种配置，可以解决由于报头的长度导致的数据平面性能的劣化。
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公开(公告)号：US08497045B2
公开(公告)日：2013-07-30
申请号：US12872313
申请日：2010-08-31
申请人： Jae Jun Ko , Nam Woo Lee , Young Min Kim , Sang Uk Kwon , Ik Jae Son , Woo Suk Sung , Jong Hyun Lee
发明人： Jae Jun Ko , Nam Woo Lee , Young Min Kim , Sang Uk Kwon , Ik Jae Son , Woo Suk Sung , Jong Hyun Lee
IPC分类号： H01M8/04
CPC分类号： H01M8/04231 , H01M8/04776
摘要： The present invention provides a purge system for a fuel cell, which can reduce the time required to thaw a frozen valve during cold start-up and reduce the whole start-up time, thus improving the cold start performance. In preferred embodiments, the present invention provides a purge system for a fuel cell with improved cold start performance, the system preferably including a main pipe connected to a purge gas outlet of a fuel cell stack to discharge a purge gas purging the fuel cell stack and impurities; an auxiliary pipe branched from the main pipe; a purge valve installed in each of the main pipe and the auxiliary pipe to perform an purge operation; a cut-off valve installed at an upstream side of the purge valve in the auxiliary pipe; and a controller for controlling the operation of the purge valves and the cut-off valve.
摘要翻译： 本发明提供一种用于燃料电池的清洗系统，其可以减少在冷启动期间解冻冷冻阀所需的时间并减少整个启动时间，从而提高冷启动性能。 在优选实施例中，本发明提供了一种具有改进的冷启动性能的燃料电池的净化系统，该系统优选地包括连接到燃料电池堆的吹扫气体出口的主管，以排出吹扫燃料电池堆的吹扫气体， 杂质; 从主管分支的辅管; 安装在每个主管和辅助管中的净化阀，以执行清洗操作; 一个安装在辅助管道上的净化阀的上游侧的截止阀; 以及用于控制清洗阀和截止阀的操作的控制器。
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