发明申请
- 专利标题： Manufacturing Method of a High Performance Metal-Oxide-Metal
- 专利标题（中）： 高性能金属氧化物金属的制造方法
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申请号： US13339593申请日： 2011-12-29
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公开(公告)号： US20120322256A1公开(公告)日： 2012-12-20
- 发明人: Youcun Hu , Lei Li , Chaos Zhang , Feng Ji , Yuwen Chen
- 申请人： Youcun Hu , Lei Li , Chaos Zhang , Feng Ji , Yuwen Chen
- 申请人地址： CN Shanghai
- 专利权人： SHANGHAI HUALI MICROELECTRONICS CORPORATION
- 当前专利权人： SHANGHAI HUALI MICROELECTRONICS CORPORATION
- 当前专利权人地址： CN Shanghai
- 优先权： CN201110163855.2 20110617
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
The manufacturing method of the high performance metal-oxide-metal according to the present invention resolves the problems of implementing high capacitance in the metal-oxide-metal region by the steps of filling with a low-k material both in the metal-oxide-metal region and the metal interconnection region, utilizing performing selective photolithography and etching of the first dielectric layer to define metal-oxide-metal (MOM for short) region, and fulfilling the MOM region with high dielectric constant (high-k) material to realize a high performance MOM capacitor. Using the present method, high-k material and low-k material within the same film layer are realized. High-k material region is used as MOM to achieve high capacitor c, thereby reducing the area used by chips and further improving the electrics performance.
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