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8 条记录 (耗时 0.012 秒)

    Method, System and Device for Real-Time Control of PPV (Pay Per View) Service
    1.
    发明申请
    Method, System and Device for Real-Time Control of PPV (Pay Per View) Service 审中-公开
    用于实时控制PPV（付费视图）服务的方法，系统和设备

    公开(公告)号：US20120174172A1

    公开(公告)日：2012-07-05

    申请号：US13383873

    申请日：2009-12-24

    申请人： Feng Ji

    发明人： Feng Ji

    IPC分类号： H04N21/266

    CPC分类号： H04N7/163 ,  H04N21/2187 ,  H04N21/26258 ,  H04N21/47211 ,  H04N21/6334 ,  H04N21/6405 ,  H04N21/64322

    摘要： A method and a system for real-time control of a Pay per View (PPV) service are disclosed in the present invention. The method includes: an Internet protocol television service control function (IPTV SCF) entity confirming that there is a PPV program that is not subscribed by a user on a current live channel according to a live session establishment request sent from a user terminal; and the IPTV SCF entity notifying the user terminal to subscribe the PPV program that is not subscribed. A device for real-time control of PPV service is also disclosed in the present invention. With the present invention, the users are enabled to subscribe and view the PPV program in real time, thereby improving the user's experience.

    摘要翻译： 在本发明中公开了一种用于实时监控每次付费付费（PPV）业务的方法和系统。 该方法包括：根据从用户终端发送的实况会话建立请求，确定在当前直播频道上确认没有用户订阅的PPV节目的因特网协议电视业务控制功能（IPTV SCF）实体; 并且IPTV SCF实体通知用户终端订阅未订阅的PPV节目。 本发明还公开了一种用于实时控制PPV服务的设备。 利用本发明，用户能够实时订阅和查看PPV程序，从而改善用户体验。

    Manufacturing method of a high performance metal-oxide-metal
    3.
    发明授权
    Manufacturing method of a high performance metal-oxide-metal 有权
    高性能金属氧化物金属的制造方法

    公开(公告)号：US08507355B2

    公开(公告)日：2013-08-13

    申请号：US13339593

    申请日：2011-12-29

    申请人： Youcun Hu ,  Lei Li ,  Chaos Zhang ,  Feng Ji ,  Yuwen Chen

    发明人： Youcun Hu ,  Lei Li ,  Chaos Zhang ,  Feng Ji ,  Yuwen Chen

    IPC分类号： H01L21/20

    CPC分类号： H01L28/60 ,  H01L21/76802 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of manufacturing high performance metal-oxide-metal capacitor device that resolves problems with implementing high capacitance in the metal-oxide-metal region by filling with a low-k material both in the metal-oxide-metal region and the metal interconnection region, utilizing performing selective photolithography and etching of the first dielectric layer to define metal-oxide-metal (MOM for short) region, and filling the MOM region with high dielectric constant (high-k) material to realize a high performance MOM capacitor.

    摘要翻译： 一种制造高性能金属 - 氧化物 - 金属电容器器件的方法，其通过在金属氧化物金属区域和金属互连区域中填充低k材料来解决在金属 - 氧化物 - 金属区域中实现高电容的问题 利用执行选择性光刻和蚀刻第一介电层以限定金属氧化物金属（MOM）区域，并且填充具有高介电常数（高k）材料的MOM区域，以实现高性能MOM电容器。

    Manufacturing Method of a High Performance Metal-Oxide-Metal
    4.
    发明申请
    Manufacturing Method of a High Performance Metal-Oxide-Metal 有权
    高性能金属氧化物金属的制造方法

    公开(公告)号：US20120322256A1

    公开(公告)日：2012-12-20

    申请号：US13339593

    申请日：2011-12-29

    申请人： Youcun Hu ,  Lei Li ,  Chaos Zhang ,  Feng Ji ,  Yuwen Chen

    发明人： Youcun Hu ,  Lei Li ,  Chaos Zhang ,  Feng Ji ,  Yuwen Chen

    IPC分类号： H01L21/768

    CPC分类号： H01L28/60 ,  H01L21/76802 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The manufacturing method of the high performance metal-oxide-metal according to the present invention resolves the problems of implementing high capacitance in the metal-oxide-metal region by the steps of filling with a low-k material both in the metal-oxide-metal region and the metal interconnection region, utilizing performing selective photolithography and etching of the first dielectric layer to define metal-oxide-metal (MOM for short) region, and fulfilling the MOM region with high dielectric constant (high-k) material to realize a high performance MOM capacitor. Using the present method, high-k material and low-k material within the same film layer are realized. High-k material region is used as MOM to achieve high capacitor c, thereby reducing the area used by chips and further improving the electrics performance.

    摘要翻译： 根据本发明的高性能金属氧化物金属的制造方法通过以下步骤来解决在金属氧化物 - 金属区域中实现高电容的问题：在金属氧化物 - 金属 - 金属区域中填充低k材料， 金属区域和金属互连区域，利用第一介电层的选择性光刻和蚀刻来限定金属氧化物金属（MOM）区域，并实现具有高介电常数（高k）材料的MOM区域，以实现 高性能MOM电容器。 使用本方法，实现了在相同膜层内的高k材料和低k材料。 将高k材料区域用作MOM以实现高电容器c，从而减小芯片使用的面积并进一步提高电气性能。

    SOFTWARE LAYOUT PROCESSING IN LOCALIZATION
    5.
    发明申请
    SOFTWARE LAYOUT PROCESSING IN LOCALIZATION 审中-公开
    本地化软件布局处理

    公开(公告)号：US20120254833A1

    公开(公告)日：2012-10-04

    申请号：US13435045

    申请日：2012-03-30

    申请人： MOLLY CHANG ,  XIAO FENG JI ,  MICHAEL R. O'BRIEN

    发明人： MOLLY CHANG ,  XIAO FENG JI ,  MICHAEL R. O'BRIEN

    IPC分类号： G06F9/44

    CPC分类号： G06F8/36 ,  G06F9/454

    摘要： A method for processing software layout can include exporting layout setting information from design elements of a software; formatting the layout setting information, and storing it in a layout characteristic file; and importing the layout setting information in the layout characteristic file into design elements of another software. Layout information of each language can be stored in a customizable layout characteristic file.

    摘要翻译： 处理软件布局的方法可以包括从软件的设计元素导出布局设置信息; 格式化布局设置信息，并将其存储在布局特征文件中; 并将布局特征文件中的布局设置信息导入另一软件的设计元素。 每种语言的布局信息可以存储在可自定义的布局特征文件中。