公开(公告)号：US08507355B2

公开(公告)日：2013-08-13

申请号：US13339593

申请日：2011-12-29

申请人： Youcun Hu ,  Lei Li ,  Chaos Zhang ,  Feng Ji ,  Yuwen Chen

发明人： Youcun Hu ,  Lei Li ,  Chaos Zhang ,  Feng Ji ,  Yuwen Chen

IPC分类号： H01L21/20

CPC分类号： H01L28/60 ,  H01L21/76802 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing high performance metal-oxide-metal capacitor device that resolves problems with implementing high capacitance in the metal-oxide-metal region by filling with a low-k material both in the metal-oxide-metal region and the metal interconnection region, utilizing performing selective photolithography and etching of the first dielectric layer to define metal-oxide-metal (MOM for short) region, and filling the MOM region with high dielectric constant (high-k) material to realize a high performance MOM capacitor.

摘要翻译： 一种制造高性能金属 - 氧化物 - 金属电容器器件的方法，其通过在金属氧化物金属区域和金属互连区域中填充低k材料来解决在金属 - 氧化物 - 金属区域中实现高电容的问题 利用执行选择性光刻和蚀刻第一介电层以限定金属氧化物金属（MOM）区域，并且填充具有高介电常数（高k）材料的MOM区域，以实现高性能MOM电容器。

公开(公告)号：US20120322256A1

公开(公告)日：2012-12-20

申请号：US13339593

申请日：2011-12-29

申请人： Youcun Hu ,  Lei Li ,  Chaos Zhang ,  Feng Ji ,  Yuwen Chen

发明人： Youcun Hu ,  Lei Li ,  Chaos Zhang ,  Feng Ji ,  Yuwen Chen

IPC分类号： H01L21/768

CPC分类号： H01L28/60 ,  H01L21/76802 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

摘要： The manufacturing method of the high performance metal-oxide-metal according to the present invention resolves the problems of implementing high capacitance in the metal-oxide-metal region by the steps of filling with a low-k material both in the metal-oxide-metal region and the metal interconnection region, utilizing performing selective photolithography and etching of the first dielectric layer to define metal-oxide-metal (MOM for short) region, and fulfilling the MOM region with high dielectric constant (high-k) material to realize a high performance MOM capacitor. Using the present method, high-k material and low-k material within the same film layer are realized. High-k material region is used as MOM to achieve high capacitor c, thereby reducing the area used by chips and further improving the electrics performance.

摘要翻译： 根据本发明的高性能金属氧化物金属的制造方法通过以下步骤来解决在金属氧化物 - 金属区域中实现高电容的问题：在金属氧化物 - 金属 - 金属区域中填充低k材料， 金属区域和金属互连区域，利用第一介电层的选择性光刻和蚀刻来限定金属氧化物金属（MOM）区域，并实现具有高介电常数（高k）材料的MOM区域，以实现 高性能MOM电容器。 使用本方法，实现了在相同膜层内的高k材料和低k材料。 将高k材料区域用作MOM以实现高电容器c，从而减小芯片使用的面积并进一步提高电气性能。