发明申请
- 专利标题： MANUFACTURING METHOD FOR METAL GATE
- 专利标题（中）： 金属门的制造方法
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申请号： US13164781申请日： 2011-06-21
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公开(公告)号： US20120329261A1公开(公告)日： 2012-12-27
- 发明人: Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen , Yu-Min Lin , Chin-Cheng Chien , Jei-Ming Chen , Chun-Wei Hsu , Chia-Lung Chang , Yi-Ching Wu , Shu-Yen Chan
- 申请人： Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen , Yu-Min Lin , Chin-Cheng Chien , Jei-Ming Chen , Chun-Wei Hsu , Chia-Lung Chang , Yi-Ching Wu , Shu-Yen Chan
- 主分类号： H01L21/782
- IPC分类号： H01L21/782 ; H01L21/28
摘要：
A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.
公开/授权文献
- US08536038B2 Manufacturing method for metal gate using ion implantation 公开/授权日：2013-09-17
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