发明申请
- 专利标题： Vertical Transistor with Improved Robustness
- 专利标题（中）： 具有提高鲁棒性的垂直晶体管
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申请号： US13194362申请日： 2011-07-29
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公开(公告)号： US20130026561A1公开(公告)日： 2013-01-31
- 发明人: Rainald Sander , Markus Winkler , Michael Asam , Matthias Stecher
- 申请人： Rainald Sander , Markus Winkler , Michael Asam , Matthias Stecher
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A transistor is disclosed that includes a semiconductor body having a first horizontal surface. A drift region is arranged in the semiconductor body. A plurality of gate electrodes is arranged in trenches of the semiconductor body. The trenches have a longitudinal direction and extending parallel relative to each other. The longitudinal direction of the trenches extends in a first lateral direction of the semiconductor body. The body regions and the source regions are arranged between the trenches. The body regions are arranged between the drift region and the source regions in a vertical direction of the semiconductor body. In the first horizontal surface, the source regions and the body regions are arranged alternately in the first lateral direction. A source electrode is electrically connected to the source regions and the body regions in the first horizontal surface.
公开/授权文献
- US09431484B2 Vertical transistor with improved robustness 公开/授权日：2016-08-30
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