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16 条记录 (耗时 0.011 秒)

    Power switch with an overcurrent protection device
    2.
    发明授权
    Power switch with an overcurrent protection device 有权
    带过流保护装置的电源开关

    公开(公告)号：US08169224B2

    公开(公告)日：2012-05-01

    申请号：US12499611

    申请日：2009-07-08

    申请人： Rainald Sander ,  Steffen Thiele ,  Markus Winkler

    发明人： Rainald Sander ,  Steffen Thiele ,  Markus Winkler

    IPC分类号： G01R31/08 ,  G01R19/00 ,  G05F3/16

    CPC分类号： H03K17/0822 ,  G01R19/0092

    摘要： A power circuit includes a power transistor for feeding a load current to a load, a measuring transistor for coupling out a measurement current dependent on the load current, at least two coupling transistors for dividing the measurement current into an internal measurement current and into an external measurement current, wherein the external measurement current can be fed to an external evaluation circuit, and the internal measurement current is fed to an internal evaluation circuit for evaluation. A third coupling transistor can be coupled to the measuring transistor if a measuring device determines a non-coupled state, and the third coupling transistor can be decoupled from the measuring transistor if the measuring device determines a coupled state. The measuring device determines the coupled state if the external evaluation device is coupled to the power circuit, and the measuring device determines a non-coupled state if the external evaluation device is not coupled to the power circuit.

    摘要翻译： 电源电路包括用于向负载馈送负载电流的功率晶体管，用于耦合取决于负载电流的测量电流的测量晶体管，用于将测量电流分成内部测量电流的至少两个耦合晶体管和外部 测量电流，其中外部测量电流可以被馈送到外部评估电路，并且内部测量电流被馈送到用于评估的内部评估电路。 如果测量装置确定非耦合状态，则第三耦合晶体管可耦合到测量晶体管，并且如果测量装置确定耦合状态，则第三耦合晶体管可以与测量晶体管分离。 如果外部评估装置耦合到电源电路，则测量装置确定耦合状态，并且如果外部评估装置未耦合到电源电路，则测量装置确定非耦合状态。

    Connector arrangement
    3.
    发明授权
    Connector arrangement 有权
    连接器布置

    公开(公告)号：US07351078B2

    公开(公告)日：2008-04-01

    申请号：US10518947

    申请日：2003-06-17

    申请人： Markus Winkler ,  Armin Deinzer

    发明人： Markus Winkler ,  Armin Deinzer

    IPC分类号： H01R13/62

    CPC分类号： H01R13/62977 ,  H01R13/62927 ,  H01R13/631

    摘要： The present invention relates to a connector arrangement with a first housing and a second housing, which receive a plug arrangement and a socket arrangement, respectively, and can be joined together by means of a cross slider which has guide frame ramps, and which is controlled by a pivoted lever mounted on a housing, wherein all guide frame slots or ramps and the bearing of the pivoted lever are open in the direction of plugging in order to make possible an insertion of the respective guide tabs or bearing tabs.

    摘要翻译： 本发明涉及一种具有第一壳体和第二壳体的连接器装置，其分别容纳插头装置和插座装置，并且可以通过具有引导框架斜面的十字滑块连接在一起，并且其被控制 通过安装在壳体上的枢转杆，其中所有引导框架槽或斜面以及枢转杆的轴承在堵塞的方向上是敞开的，以便可能插入相应的导向突片或承载翼片。

    Over-Temperature Protected Transistor
    4.
    发明申请
    Over-Temperature Protected Transistor 有权
    过温保护晶体管

    公开(公告)号：US20130200927A1

    公开(公告)日：2013-08-08

    申请号：US13369092

    申请日：2012-02-08

    申请人： Michael Asam ,  Carmelo Fabio Giunta ,  Wolfgang Horchler ,  Markus Winkler

    发明人： Michael Asam ,  Carmelo Fabio Giunta ,  Wolfgang Horchler ,  Markus Winkler

    IPC分类号： H03K17/00

    CPC分类号： H03K17/0822 ,  H03K2217/0081

    摘要： A circuit for controlling the switching operation of a transistor is described. A gate driver circuit is operably connected to a control electrode of the transistor and is configured to charge and discharge the control electrode to switch the transistor on and off, respectively, in accordance with a control signal. The charging and discharging of the control electrode is done such that the corresponding transitions in the load current and the output voltage are smooth with a defined slope. A controllable switch is connected to the control electrode such that, when the switch closes, the control electrode is quickly discharged via the switch thus quickly switching off the transistor. A control logic circuit is configured to close the controllable switch for switching off the transistor when at least one of a number of conditions holds true.

    摘要翻译： 描述用于控制晶体管的开关操作的电路。 栅极驱动器电路可操作地连接到晶体管的控制电极，并且被配置为对控制电极进行充电和放电，以根据控制信号分别开关晶体管。 完成控制电极的充电和放电，使得负载电流和输出电压中的相应转变以规定的斜率平滑。 可控开关连接到控制电极，使得当开关闭合时，控制电极通过开关快速放电，从而快速关断晶体管。 控制逻辑电路被配置为当多个条件中的至少一个成立时关闭用于关断晶体管的可控开关。

    Method for Setting a Reference Potential of a Current Sensor and Arrangement for Determining the Reference Potential of a Power Semiconductor Device
    6.
    发明申请
    Method for Setting a Reference Potential of a Current Sensor and Arrangement for Determining the Reference Potential of a Power Semiconductor Device 有权
    用于设置电流传感器的参考电位的方法和用于确定功率半导体器件的参考电位的布置

    公开(公告)号：US20080036445A1

    公开(公告)日：2008-02-14

    申请号：US11836730

    申请日：2007-08-09

    申请人： Thorsten Meyer ,  Mathias Alexander von Borcke ,  Markus Winkler

    发明人： Thorsten Meyer ,  Mathias Alexander von Borcke ,  Markus Winkler

    IPC分类号： G01R19/00

    CPC分类号： G01R19/0092 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/4847 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/00

    摘要： A method for setting a reference potential of a current sensor in a power semiconductor device is disclosed. On the basis of a specific geometry and a typical two-dimensional potential distribution of the power semiconductor device, a plurality of tapping points is predetermined on an area of the power semiconductor device. On the basis of the specific geometry of the power semiconductor device, a line course between the tapping points and a measuring point for measuring a potential average value is determined and realized. Respective potential values are detected at the tapping points and fed to the measuring point. The potential average value is determined at the measuring point. The potential of the current sensor is set to the potential average value thus determined.

    摘要翻译： 公开了一种用于设置功率半导体器件中的电流传感器的参考电位的方法。 基于功率半导体器件的特定几何形状和典型的二维电势分布，在功率半导体器件的区域上预先确定多个分接点。 基于功率半导体器件的具体几何形状，确定并实现了出铁点与用于测量电位平均值的测量点之间的线路。 在攻丝点检测到各自的电位值，并将其馈送到测量点。 在测量点确定电位平均值。 将电流传感器的电位设置为如此确定的电位平均值。

    Vertical Transistor with Improved Robustness
    9.
    发明申请
    Vertical Transistor with Improved Robustness 有权
    具有提高鲁棒性的垂直晶体管

    公开(公告)号：US20130026561A1

    公开(公告)日：2013-01-31

    申请号：US13194362

    申请日：2011-07-29

    申请人： Rainald Sander ,  Markus Winkler ,  Michael Asam ,  Matthias Stecher

    发明人： Rainald Sander ,  Markus Winkler ,  Michael Asam ,  Matthias Stecher

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/7805

    摘要： A transistor is disclosed that includes a semiconductor body having a first horizontal surface. A drift region is arranged in the semiconductor body. A plurality of gate electrodes is arranged in trenches of the semiconductor body. The trenches have a longitudinal direction and extending parallel relative to each other. The longitudinal direction of the trenches extends in a first lateral direction of the semiconductor body. The body regions and the source regions are arranged between the trenches. The body regions are arranged between the drift region and the source regions in a vertical direction of the semiconductor body. In the first horizontal surface, the source regions and the body regions are arranged alternately in the first lateral direction. A source electrode is electrically connected to the source regions and the body regions in the first horizontal surface.

    摘要翻译： 公开了一种包括具有第一水平表面的半导体本体的晶体管。 漂移区布置在半导体本体中。 多个栅极布置在半导体本体的沟槽中。 沟槽具有纵向并相对于彼此平行延伸。 沟槽的纵向方向在半导体本体的第一横向延伸。 主体区域和源区域布置在沟槽之间。 主体区域在半导体本体的垂直方向上布置在漂移区域和源极区域之间。 在第一水平表面中，源区域和主体区域在第一横向上交替布置。 源电极电连接到第一水平表面中的源极区域和主体区域。

    Bridge driver circuit with integrated charge pump
    10.
    发明授权
    Bridge driver circuit with integrated charge pump 有权
    带集成电荷泵的桥式驱动电路

    公开(公告)号：US07872433B2

    公开(公告)日：2011-01-18

    申请号：US11736301

    申请日：2007-04-17

    申请人： Marcus Nuebling ,  Markus Winkler

    发明人： Marcus Nuebling ,  Markus Winkler

    IPC分类号： H02P6/14

    CPC分类号： H02M3/07 ,  H02M1/08 ,  H02P7/28 ,  H02P27/06

    摘要： Bridge driver circuit with integrated charge pump is disclosed. One embodiment provides a driving circuit section of a charge pump capacitor being formed with power switch components and/or diodes of a bridge circuit section.

    摘要翻译： 公开了具有集成电荷泵的桥式驱动器电路。 一个实施例提供电荷泵电容器的驱动电路部分，其形成有电桥开关部件和/或桥接电路部分的二极管。