公开(公告)号：US07158359B2

公开(公告)日：2007-01-02

申请号：US10252322

申请日：2002-09-23

申请人： Martin Bertele ,  Robert Oyrer ,  Rainald Sander

发明人： Martin Bertele ,  Robert Oyrer ,  Rainald Sander

IPC分类号： H02H3/08

CPC分类号： H03K17/0822 ,  H03K17/063

摘要： A circuit configuration has a first semiconductor switch and a first protection circuit. The protection circuit has a second semiconductor switch whose load path is connected between a control terminal and a load path terminal of the first semiconductor switch. The second semiconductor switch is switched on by a comparator circuit, in each case for a predefined time period, in dependence on a comparison between a load path voltage and a reference voltage, or between a load path current and a reference current.

摘要翻译： 电路结构具有第一半导体开关和第一保护电路。 保护电路具有第二半导体开关，其负载路径连接在第一半导体开关的控制端子和负载路径端子之间。 根据负载路径电压和参考电压之间的比较，或负载路径电流与参考电流之间的比较，第二半导体开关由比较器电路在每种情况下接通预定的时间段。

公开(公告)号：US06304422B1

公开(公告)日：2001-10-16

申请号：US09694571

申请日：2000-10-23

申请人： Rainald Sander ,  Chihao Xu ,  Josef-Matthias Gantioler

发明人： Rainald Sander ,  Chihao Xu ,  Josef-Matthias Gantioler

IPC分类号： H02H318

CPC分类号： H02H11/003 ,  Y10T307/839

摘要： The polarity reversal protection circuit provides for a semiconductor switch (11) to be connected in parallel with the polarity reversal protection diode (10), which switch is switched off in the event of polarity reversal and is switched on during normal operation.

摘要翻译： 极性反转保护电路提供与极性反转保护二极管（10）并联连接的半导体开关（11），该极性反转保护二极管（10）在极性反转的情况下被切断并且在正常操作期间被接通。

公开(公告)号：US6118308A

公开(公告)日：2000-09-12

申请号：US275374

申请日：1999-03-24

申请人： Rainald Sander

发明人： Rainald Sander

IPC分类号： H03K5/24 ,  H03K5/153

CPC分类号： H03K5/2481

摘要： A circuit configuration for a comparator provides that first and second transistors on an input side are connected jointly by their two control terminals to a first input terminal, and that the first and second transistors have different cutoff voltages. Such a circuit configuration has the advantage that at a zero-volt input voltage, no current is consumed. The circuit configuration can be connected directly to a high-voltage supply without the aid of regulating voltages or high-precision reference voltages.

摘要翻译： 用于比较器的电路配置使得输入侧的第一和第二晶体管由它们的两个控制端子共同连接到第一输入端，并且第一和第二晶体管具有不同的截止电压。 这种电路配置具有以下优点：在零伏输入电压下，不消耗电流。 电路配置可以直接连接到高压电源，而无需调节电压或高精度参考电压。

公开(公告)号：US5726478A

公开(公告)日：1998-03-10

申请号：US769348

申请日：1996-12-19

申请人： Josef-Matthias Gantioler ,  Ludwig Leipold ,  Rainald Sander ,  Jens-Peer Stengl ,  Jenoe Tihanyi

发明人： Josef-Matthias Gantioler ,  Ludwig Leipold ,  Rainald Sander ,  Jens-Peer Stengl ,  Jenoe Tihanyi

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H01L23/62

CPC分类号： H01L27/0251 ,  H01L2924/0002

摘要： An integrated power semiconductor component includes a substrate of a first conduction type. At least one first region of a second conduction type is embedded in the substrate and at least one second region of the second conduction type is embedded in the substrate. A substrate contact supplies a supply voltage. Contact-making semiconductor components are embedded in the first region and in the second region. At least a portion of the semiconductor components in the first region control at least a portion of the semiconductor components in the second region. A third region of the second conduction type is disposed between the first region and the second region, and the first region and the third region are at different potentials.

摘要翻译： 集成功率半导体元件包括第一导电类型的衬底。 至少一个第二导电类型的第一区域被嵌入衬底中，并且第二导电类型的至少一个第二区域被嵌入衬底中。 基板触点提供电源电压。 接触半导体部件嵌入在第一区域和第二区域中。 第一区域中的半导体部件的至少一部分控制第二区域中的至少一部分半导体部件。 第二导电类型的第三区域设置在第一区域和第二区域之间，并且第一区域和第三区域处于不同的电位。

公开(公告)号：US5656968A

公开(公告)日：1997-08-12

申请号：US558845

申请日：1995-11-15

申请人： Rainald Sander ,  Jenoe Tihanyi

发明人： Rainald Sander ,  Jenoe Tihanyi

IPC分类号： H02H9/02 ,  G05F1/56 ,  H03F3/20 ,  H03K17/082 ,  H03K17/687 ,  G05F1/10

CPC分类号： G05F1/56 ,  H03K17/0822

摘要： In a circuit arrangement for regulating the load current of a power MOSFET, the drain-source voltage of the power MOSFET is imaged onto the input of a second MOSFET connected between a gate terminal and source terminal of the power MOSFET. When the input voltage exceeds the cut-off voltage, then the gate-source voltage at the power MOSFET is regulated back to a value that corresponds to the sum of the cut-off voltages of the second MOSFET and a third MOSFET. The gate terminals of third MOSFET and the power MOSFET are connected to one another.

摘要翻译： 在用于调节功率MOSFET的负载电流的电路装置中，功率MOSFET的漏极 - 源极电压被成像到连接在功率MOSFET的栅极端子和源极端子之间的第二MOSFET的输入。 当输入电压超过截止电压时，功率MOSFET处的栅极 - 源极电压被调节回到与第二MOSFET和第三MOSFET的截止电压之和相对应的值。 第三个MOSFET和功率MOSFET的栅极端子彼此连接。

公开(公告)号：US5266840A

公开(公告)日：1993-11-30

申请号：US999687

申请日：1992-12-31

申请人： Ludwig Leipold ,  Rainald Sander ,  Jenoe Tihanyi ,  Roland Weber

发明人： Ludwig Leipold ,  Rainald Sander ,  Jenoe Tihanyi ,  Roland Weber

IPC分类号： B60Q11/00 ,  G01R31/02 ,  H05B37/03 ,  H01J1/00

CPC分类号： H05B37/03 ,  B60Q11/005 ,  G01R31/024 ,  Y10T307/826

摘要： A circuit for detecting the non-operating condition of a load which is connected in series with an electronic switch wherein a comparator has a first input which is connected to the junction point between the load and the electronic switch and has a second input which is a reference voltage such that when the load fails the comparator produces an output to indicate such condition and wherein the reference voltage is lower than the normal voltage when the load is operating properly and is higher than when the load is in the inoperative condition.

摘要翻译： 一种用于检测与电子开关串联连接的负载的非工作状态的电路，其中比较器具有连接到负载和电子开关之间的连接点的第一输入端，并且具有第二输入端 参考电压使得当负载故障时，比较器产生用于指示这种状况的输出，并且其中当负载正常工作时，参考电压低于正常电压，并且高于负载处于不工作状态时的参考电压。

公开(公告)号：US4952827A

公开(公告)日：1990-08-28

申请号：US438342

申请日：1989-11-15

申请人： Ludwig Leipold ,  Rainald Sander ,  Jenoe Tihanyi ,  Roland Weber ,  Nance: Paul

发明人： Ludwig Leipold ,  Rainald Sander ,  Jenoe Tihanyi ,  Roland Weber ,  Nance: Paul

IPC分类号： H03K17/08 ,  H03K17/06 ,  H03K17/082

CPC分类号： H03K17/0822 ,  H03K17/063

摘要： A circuit arrangement for controlling load current of a power MOSFET wherein the load is connected at the source terminal includes a second FET having a defined threshold voltage connected with its drain-source path inserted between the gate and source of the power MOSFET. A third FET connects the gate terminal of the second FET to the drain voltage of the power MOSFET when the power MOSFET is in the conductive condition. When the drain-source voltage of the power MOSFET becomes higher than the threshold voltage of the second FET, the second FET becomes conductive and drives the gate-source voltage of the power MOSFET down.

摘要翻译： 用于控制功率MOSFET的负载电流的电路装置，其中负载在源极端子处连接包括具有限定的阈值电压的第二FET，该阈值电压与插入在功率MOSFET的栅极和源极之间的漏极 - 源极路径连接。 当功率MOSFET处于导通状态时，第三FET将第二FET的栅极端子连接到功率MOSFET的漏极电压。 当功率MOSFET的漏源电压变得高于第二FET的阈值电压时，第二FET变为导通状态，并将功率MOSFET的栅极 - 源极电压降低。

公开(公告)号：US08169224B2

公开(公告)日：2012-05-01

申请号：US12499611

申请日：2009-07-08

申请人： Rainald Sander ,  Steffen Thiele ,  Markus Winkler

发明人： Rainald Sander ,  Steffen Thiele ,  Markus Winkler

IPC分类号： G01R31/08 ,  G01R19/00 ,  G05F3/16

CPC分类号： H03K17/0822 ,  G01R19/0092

摘要： A power circuit includes a power transistor for feeding a load current to a load, a measuring transistor for coupling out a measurement current dependent on the load current, at least two coupling transistors for dividing the measurement current into an internal measurement current and into an external measurement current, wherein the external measurement current can be fed to an external evaluation circuit, and the internal measurement current is fed to an internal evaluation circuit for evaluation. A third coupling transistor can be coupled to the measuring transistor if a measuring device determines a non-coupled state, and the third coupling transistor can be decoupled from the measuring transistor if the measuring device determines a coupled state. The measuring device determines the coupled state if the external evaluation device is coupled to the power circuit, and the measuring device determines a non-coupled state if the external evaluation device is not coupled to the power circuit.

摘要翻译： 电源电路包括用于向负载馈送负载电流的功率晶体管，用于耦合取决于负载电流的测量电流的测量晶体管，用于将测量电流分成内部测量电流的至少两个耦合晶体管和外部 测量电流，其中外部测量电流可以被馈送到外部评估电路，并且内部测量电流被馈送到用于评估的内部评估电路。 如果测量装置确定非耦合状态，则第三耦合晶体管可耦合到测量晶体管，并且如果测量装置确定耦合状态，则第三耦合晶体管可以与测量晶体管分离。 如果外部评估装置耦合到电源电路，则测量装置确定耦合状态，并且如果外部评估装置未耦合到电源电路，则测量装置确定非耦合状态。

公开(公告)号：US07449778B2

公开(公告)日：2008-11-11

申请号：US11740630

申请日：2007-04-26

申请人： Rainald Sander

发明人： Rainald Sander

IPC分类号： H01L23/34 ,  H01L23/48

CPC分类号： H01L23/49575 ,  H01L24/37 ,  H01L24/39 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/37599 ,  H01L2224/48237 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H02M7/003 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/37099

摘要： A power semiconductor module (41) as H-bridge circuit (42) has four power semiconductor chips (N1, N2, P1, P2) and a semiconductor control chip (IC). The semiconductor chips (N1, N2, P1, P2, IC) are arranged on three mutually separate large-area lead chip contact areas (43 to 45) of a lead plane (80). The semiconductor control chip (IC) is arranged on a centrally arranged lead chip contact area (45). An n-channel power semiconductor chip (N1, N2) as low-side switch (58, 59) and a p-channel power semiconductor chip (P1, P2) as high-side switch (48, 49) are in each case arranged on two laterally arranged lead chip contact areas (43, 44). The n-channel power semiconductor chips (N1, N2) are jointly at an earth potential (50) and the p-channel power semiconductor chips (P1, P2) are electrically connected to separate supply voltage sources (VS1, VS2).

摘要翻译： 作为H桥电路（42）的功率半导体模块（41）具有四个功率半导体芯片（N 1，N 2，P 1，P 2）和半导体控制芯片（IC）。 半导体芯片（N 1，N 2，P 1，P 2，IC）布置在引导平面（80）的三个相互独立的大面积引线芯片接触区域（43至45）上。 半导体控制芯片（IC）布置在中心布置的引线芯片接触区域（45）上。 作为低侧开关（58,59）和作为高侧开关（48,49）的p沟道功率半导体芯片（P 1，P 2）的n沟道功率半导体芯片（N 1，N 2） 在每种情况下布置在两个横向布置的引线芯片接触区域（43,44）上。 n沟道功率半导体芯片（N 1，N 2）共同处于地电位（50），并且p沟道功率半导体芯片（P 1，P 2）电连接到单独的电源电压源（VS 1， VS 2）。

公开(公告)号：US20070195476A1

公开(公告)日：2007-08-23

申请号：US11677852

申请日：2007-02-22

申请人： Rainald Sander

发明人： Rainald Sander

IPC分类号： H02H3/08

CPC分类号： H02H3/08 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13091 ,  H02H5/041 ,  H01L2924/00014 ,  H01L2924/00

摘要： A device and a method for protecting a controllable current consumer is provided wherein the current through the current consumer is detected and the control signal is altered when exceeding a threshold current such that the current through the current consumer will be altered. Thus, the circuit is implemented such that the current consumer is at the same time protected against overheating, i.e. when reaching a temperature threshold, the ignition signal will be altered such that the current through the current consumer decreases.

摘要翻译： 提供一种用于保护可控电流消费者的装置和方法，其中检测到通过当前消费者的电流，并且当超过阈值电流时控制信号被改变，使得通过当前消费者的电流将被改变。 因此，电路被实现为使得当前消费者同时受到过热保护，即当达到温度阈值时，将改变点火信号，使得通过当前消费者的电流降低。