Invention Application
- Patent Title: Multijunction Solar Cells Lattice Matched to InP Using Sb-Containing Alloys
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Application No.: US13592524Application Date: 2012-08-23
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Publication No.: US20130048063A1Publication Date: 2013-02-28
- Inventor: Robert J. Walters , Phillip Jenkins , Maria Gonzalez , Igor Vurgaftman , Jerry R. Meyer , Joshua Abell , Matthew P. Lumb , Michael K. Yakes , Joseph G. Tischler , Cory Cress , Nicholas Ekins-Daukes , Paul Stavrinou , Jessica Adams , Ngai Chan
- Applicant: Robert J. Walters , Phillip Jenkins , Maria Gonzalez , Igor Vurgaftman , Jerry R. Meyer , Joshua Abell , Matthew P. Lumb , Michael K. Yakes , Joseph G. Tischler , Cory Cress , Nicholas Ekins-Daukes , Paul Stavrinou , Jessica Adams , Ngai Chan
- Applicant Address: US DC Washington
- Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Main IPC: H01L31/0725
- IPC: H01L31/0725 ; G06F17/50
Abstract:
A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from In1-a-bGaaAlbAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.
Information query
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