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    Photovoltaic device
    1.
    发明申请
    Photovoltaic device 有权
    光伏装置

    公开(公告)号：US20080251118A1

    公开(公告)日：2008-10-16

    申请号：US12078315

    申请日：2008-03-28

    申请人： Carsten Rohr ,  Keith W.J. Barnham ,  Nicholas Ekins-Daukes ,  James P. Connolly ,  Iam M. Ballard ,  Massimo Mazzer

    发明人： Carsten Rohr ,  Keith W.J. Barnham ,  Nicholas Ekins-Daukes ,  James P. Connolly ,  Iam M. Ballard ,  Massimo Mazzer

    IPC分类号： H01L31/00

    CPC分类号： B82Y20/00 ,  H01L31/035236 ,  H01L31/0735 ,  H01L31/075 ,  H02S10/30 ,  Y02E10/544 ,  Y02E10/548

    摘要： A method of forming a photovoltaic device includes a plurality of quantum wells and a plurality of barriers. The quantum wells and barriers are disposed on an underlying layer. The barriers alternate with the quantum wells. One of the plurality of quantum wells and the plurality of barriers is comprised of tensile strained layers and the other of the plurality of quantum wells and the plurality of barriers is comprised of compressively strained layers. The tensile and compressively strained layers have elastic properties. The method includes selecting compositions and thicknesses of the barriers and quantum wells taking into account the elastic properties such that each period of one tensile strained layer and one compressively strained layer exerts substantially no shear force on a neighboring structure; providing the underlying layer; and forming the quantum sells and barriers on the underlying layer according to the derived compositions and thicknesses.

    摘要翻译： 形成光伏器件的方法包括多个量子阱和多个屏障。 量子阱和屏障设置在下层上。 这些障碍与量子阱交替。 多个量子阱和多个势垒中的一个由拉伸应变层组成，多个量子阱中的另一个和多个势垒由压缩应变层组成。 拉伸和压缩应变层具有弹性特性。 该方法包括考虑弹性特性来选择阻挡层和量子阱的组成和厚度，使得一个拉伸应变层和一个压缩应变层的每个周期基本上不对相邻结构施加剪切力; 提供下层; 并根据衍生的组成和厚度在下层形成量子销售和障碍。

    Photovoltaic device
    3.
    发明授权
    Photovoltaic device 有权
    光伏装置

    公开(公告)号：US07868247B2

    公开(公告)日：2011-01-11

    申请号：US12078315

    申请日：2008-03-28

    申请人： Carsten Rohr ,  Keith W. J. Barnham ,  Nicholas Ekins-Daukes ,  James P. Connolly ,  Ian M. Ballard ,  Massimo Mazzer

    发明人： Carsten Rohr ,  Keith W. J. Barnham ,  Nicholas Ekins-Daukes ,  James P. Connolly ,  Ian M. Ballard ,  Massimo Mazzer

    IPC分类号： H01L31/00

    CPC分类号： B82Y20/00 ,  H01L31/035236 ,  H01L31/0735 ,  H01L31/075 ,  H02S10/30 ,  Y02E10/544 ,  Y02E10/548

    摘要： A method of forming a photovoltaic device includes a plurality of quantum wells and a plurality of barriers. The quantum wells and barriers are disposed on an underlying layer. The barriers alternate with the quantum wells. One of the plurality of quantum wells and the plurality of barriers is comprised of tensile strained layers and the other of the plurality of quantum wells and the plurality of barriers is comprised of compressively strained layers. The tensile and compressively strained layers have elastic properties. The method includes selecting compositions and thicknesses of the barriers and quantum wells taking into account the elastic properties such that each period of one tensile strained layer and one compressively strained layer exerts substantially no shear force on a neighboring structure; providing the underlying layer; and forming the quantum sells and barriers on the underlying layer according to the derived compositions and thicknesses.

    摘要翻译： 形成光伏器件的方法包括多个量子阱和多个屏障。 量子阱和屏障设置在下层上。 这些障碍与量子阱交替。 多个量子阱和多个势垒中的一个由拉伸应变层组成，多个量子阱中的另一个和多个势垒由压缩应变层组成。 拉伸和压缩应变层具有弹性特性。 该方法包括考虑弹性特性来选择阻挡层和量子阱的组成和厚度，使得一个拉伸应变层和一个压缩应变层的每个周期基本上不对相邻结构施加剪切力; 提供下层; 并根据衍生的组成和厚度在下层形成量子销售和障碍。

    DEVICES AND METHODS FOR ABSORBING LIGHT
    5.
    发明申请
    DEVICES AND METHODS FOR ABSORBING LIGHT 审中-公开
    吸收光的装置和方法

    公开(公告)号：US20140175587A1

    公开(公告)日：2014-06-26

    申请号：US13876521

    申请日：2011-09-28

    申请人： Nicholas Ekins-Daukes ,  Chrisopher Clement Phillips

    发明人： Nicholas Ekins-Daukes ,  Chrisopher Clement Phillips

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L31/0232 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/18

    摘要： A light-absorbing device and method employ a series of photon-absorbing semiconductor substructures. A first semiconductor substructure provides first and second energy states. A difference between the first and second states being such as to cause an electron to be promoted from the first state to the second state upon absorption of a photon of a first energy. A second semiconductor substructure provides third and fourth energy states. The third state is arranged to receive the electron from the second state. A difference between the third and fourth states being such as to cause the electron to be promoted from the third state to the fourth state upon absorption of a subsequent photon of a second energy. The third state has a lower energy than the second state, such as to cause the electron to dissipate energy as it passes from the second state to the third state.

    摘要翻译： 光吸收装置和方法采用一系列光子吸收半导体子结构。 第一半导体子结构提供第一和第二能量状态。 第一和第二状态之间的差异是在吸收第一能量的光子时使电子从第一状态促进到第二状态。 第二个半导体子结构提供第三和第四能量状态。 第三状态被布置成从第二状态接收电子。 第三状态和第四状态之间的差异是在吸收第二能量的后续光子时使得电子从第三状态促进到第四状态。 第三状态具有比第二状态低的能量，例如当电子从第二状态传递到第三状态时使电子耗散能量。