公开(公告)号：US20150325720A1

公开(公告)日：2015-11-12

申请号：US14740348

申请日：2015-06-16

申请人： Robert J. Walters ,  Phillip Jenkins ,  Maria Gonzalez ,  Igor Vurgaftman ,  Jerry R. Meyer ,  Joshua Abell ,  Nicholas Ekins-Daukes ,  Jessica Adams ,  Paul Stavrinou ,  Michael K. Yakes ,  Joseph G. Tischler ,  Cory D. Cress ,  Matthew P. Lumb ,  Ngai Chan

发明人： Robert J. Walters ,  Phillip Jenkins ,  Maria Gonzalez ,  Igor Vurgaftman ,  Jerry R. Meyer ,  Joshua Abell ,  Nicholas Ekins-Daukes ,  Jessica Adams ,  Paul Stavrinou ,  Michael K. Yakes ,  Joseph G. Tischler ,  Cory D. Cress ,  Matthew P. Lumb ,  Ngai Chan

IPC分类号： H01L31/0304 ,  H01L31/036

CPC分类号： H01L31/0304 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/036 ,  H01L31/06875 ,  Y02E10/544

摘要： A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from In1-a-bGaaAlbAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.

摘要翻译： 使用与InP晶格匹配的材料在InP衬底上生长的多结（MJ）太阳能电池。 在示例性的三结实施例中，顶部单元由In1-xAlxAs1-ySby（其中x和y被调整以便实现与InP的晶格匹配，以下称为InAlAsSb），In1-a- bGaaAlbAs（其中a和b被调整以便实现与InP的晶格匹配，以下称为InGaAlAs），并且底部单元也是来自InGaAlAs，但具有低得多的Al组成，其在一些实施例中可以为零， 材料是InGaAs。 隧道结（TJ）连接接头并允许光电流流动。 在示例性实施例中，InAlAsSb TJ连接第一和第二结，而InGaAlAs TJ连接第二和第三结。

公开(公告)号：US09059570B1

公开(公告)日：2015-06-16

申请号：US14308768

申请日：2014-06-19

申请人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Mijin Kim ,  Charles D. Merritt

发明人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Mijin Kim ,  Charles D. Merritt

IPC分类号： H01S5/34 ,  H01S5/343

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3422 ,  H01S5/34313

摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.

摘要翻译： 提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值 电流密度Jth需要实现激光。 对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。 在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。

公开(公告)号：US08290011B2

公开(公告)日：2012-10-16

申请号：US13023656

申请日：2011-02-09

申请人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick L. Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

发明人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick L. Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/3401 ,  H01S5/3422 ,  H01S5/34306

摘要： A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.

摘要翻译： 提出了具有增益介质的增益介质和带间级联激光器。 增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当， 使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。 包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。

公开(公告)号：US07256417B2

公开(公告)日：2007-08-14

申请号：US10772573

申请日：2004-02-05

申请人： Luke J. Mawst ,  Nelson Tansu ,  Jerry R. Meyer ,  Igor Vurgaftman

发明人： Luke J. Mawst ,  Nelson Tansu ,  Jerry R. Meyer ,  Igor Vurgaftman

IPC分类号： H01L29/205 ,  H01S3/103

CPC分类号： H01L33/26 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/028 ,  H01S5/18311 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/3406 ,  H01S5/3422 ,  H01S5/3425 ,  H01S5/34306 ,  H01S5/3436 ,  H01S2304/04

摘要： Semiconductor optoelectronic devices such as diode lasers are formed on InP substrates with an active region with an InAsN or InGaAsN electron quantum well layer and a GaAsSb or InGaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in various devices to provide light emission at relatively long wavelengths, including light emitting diodes, amplifiers, surface emitting lasers and edge-emitting lasers.

摘要翻译： 诸如二极管激光器的半导体光电器件在具有InAsN或InGaAsN电子量子阱层的有源区域和形成II型量子阱的GaAsSb或InGaAsSb空穴量子阱层的InP衬底上形成。 有源区可以结合在各种装置中以提供相对较长波长的发光，包括发光二极管，放大器，表面发射激光器和边缘发射激光器。

公开(公告)号：US06282761B1

公开(公告)日：2001-09-04

申请号：US09492069

申请日：2000-01-27

申请人： William W. Bewley ,  Edward A. Aifer ,  Christopher L. Felix ,  Igor Vurgaftman ,  Jerry R. Meyer ,  John Glesener

发明人： William W. Bewley ,  Edward A. Aifer ,  Christopher L. Felix ,  Igor Vurgaftman ,  Jerry R. Meyer ,  John Glesener

IPC分类号： A44B2100

CPC分类号： H01L23/4093 ,  H01L2924/0002 ,  Y10T24/44974 ,  H01L2924/00

摘要： A pressure clip for contacting a heat sink device to a heat sink by means of a pressure bond having thermal resistance of less than about 5 K/kW/cm2. The pressure clip includes a mounting block, a clamp block; a spacer disposed between the mounting block and the clamp block forming a channel therebetween, support shoulders in the channel for supporting a heat sink, means for securing the clamp block and the spacer to the mounting block, pressure arm disposed above the mounting block, flexible joint for flexibly attaching the pressure arm to the mounting block, pressure screw disposed between the pressure arm and the mounting block for applying pressure to the pressure arm, and a plunger projecting into the channel between the mounting block and the clamp block for transmitting pressure from the pressure arm.

摘要翻译： 一种用于通过具有低于约5K / kW / cm 2的热阻的压力接合散热器件到散热器的压力夹。 压力夹包括安装块，夹紧块; 设置在安装块和夹紧块之间的间隔件，在其间形成通道，支撑用于支撑散热器的通道中的肩部，用于将夹具块和间隔件固定到安装块的装置，设置在安装块上方的压力臂，柔性 用于将压力臂柔性地附接到安装块的接头，设置在压力臂和用于向压力臂施加压力的安装块之间的压力螺钉，以及突出到安装块和夹紧块之间的通道中的柱塞，用于将压力从 压臂。

公开(公告)号：US5804475A

公开(公告)日：1998-09-08

申请号：US665931

申请日：1996-06-19

申请人： Jerry R. Meyer ,  Craig A. Hoffman ,  Filbert J. Bartoli, Jr.

发明人： Jerry R. Meyer ,  Craig A. Hoffman ,  Filbert J. Bartoli, Jr.

IPC分类号： H01L29/12 ,  H01L29/772 ,  H01L29/812 ,  H01L21/20 ,  H01L21/28

CPC分类号： B82Y10/00 ,  H01L29/125 ,  H01L29/772 ,  H01L29/8124 ,  Y10S438/962 ,  Y10S977/755 ,  Y10S977/759 ,  Y10S977/762 ,  Y10S977/891 ,  Y10S977/936

摘要： This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.

摘要翻译： 本发明描述了一种纳米尺度的带间横向谐振隧道晶体管及其制造方法，具有侧向几何形状，良好的扇出特性，并且适合于并入大规模集成电路。 晶体管具有单栅极设计，并且操作基于对量子现象高度响应的窄间隙纳米结构中的谐振隧穿工艺。 这种量子效应器件可以具有非常高的密度，在高得多的温度下操作并且能够驱动其它器件。

公开(公告)号：US5724174A

公开(公告)日：1998-03-03

申请号：US586476

申请日：1996-01-11

申请人： Jerry R. Meyer ,  Craig A. Hoffman ,  Filbert Bartoli

发明人： Jerry R. Meyer ,  Craig A. Hoffman ,  Filbert Bartoli

IPC分类号： G02F1/017 ,  G02F1/03

CPC分类号： B82Y20/00 ,  G02F1/01725 ,  G02F2001/01741

摘要： The present invention is an electro-optical modulator having (a) a first semiconductor layer and a second semiconductor layer; (b) a first quantum well layer having a conduction band minimum at an optically active point (typically the L point or the X point), disposed between the first and second semiconductor layers; (c) a second quantum well layer having a conduction band minimum at the optically inactive (at normal incidence) .GAMMA. point, disposed between the first and second semiconductor layers; (d) a spacer layer disposed between the first and second quantum well layers, where the spacer layer has a conduction band minimum that is large enough for establishing quantum confinement in the first quantum well layer at the optically active point and in the second quantum well layer at the .GAMMA. point, but small enough to allow tunnelling between the two layers on a time scale consistent with the desired switching response time. The invention also has some controllable means for applying an electric field. The invention can produce both intensity and phase changes, and may be used in a Fabry-Perot device to achieve greater modulation for a given active region thickness.

摘要翻译： 本发明是一种电光调制器，其具有（a）第一半导体层和第二半导体层; （b）在光学活性点（通常为L点或X点）处具有导带最小值的第一量子阱层，设置在第一和第二半导体层之间; （c）设置在第一和第二半导体层之间的光学非活性（在正常入射）GAMMA点具有导带最小值的第二量子阱层; （d）设置在第一和第二量子阱层之间的间隔层，其中间隔层具有足够大的导带最小值，用于在光学活性点和第二量子阱中的第一量子阱层中建立量子限制 在GAMMA点上，但是足够小以允许在与期望的切换响应时间一致的时间尺度上的两层之间的隧穿。 本发明还具有用于施加电场的一些可控的装置。 本发明可以产生强度和相位变化，并且可以在法布里 - 珀罗（Fabry-Perot）器件中使用，以对给定的有源区域厚度实现更大的调制。

公开(公告)号：US5665618A

公开(公告)日：1997-09-09

申请号：US379833

申请日：1995-01-27

申请人： Jerry R. Meyer ,  Craig A. Hoffman ,  Filbert J. Bartoli, Jr.

发明人： Jerry R. Meyer ,  Craig A. Hoffman ,  Filbert J. Bartoli, Jr.

IPC分类号： H01L29/12 ,  H01L29/772 ,  H01L29/812 ,  H01L21/265

CPC分类号： B82Y10/00 ,  H01L29/125 ,  H01L29/772 ,  H01L29/8124 ,  Y10S438/962 ,  Y10S977/755 ,  Y10S977/759 ,  Y10S977/762 ,  Y10S977/891 ,  Y10S977/936

摘要： This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.

摘要翻译： 本发明描述了一种纳米尺度的带间横向谐振隧道晶体管及其制造方法，具有侧向几何形状，良好的扇出特性，并且适合于并入大规模集成电路。 晶体管具有单栅极设计，并且操作基于对量子现象高度响应的窄间隙纳米结构中的谐振隧穿工艺。 这种量子效应器件可以具有非常高的密度，在高得多的温度下操作并且能够驱动其它器件。

公开(公告)号：US5477377A

公开(公告)日：1995-12-19

申请号：US916290

申请日：1992-07-17

申请人： Terry D. Golding ,  John H. Miller, Jr. ,  Jerry R. Meyer ,  Eric R. Youngdale ,  Filbert J. Bartoli ,  Craig A. Hoffman

发明人： Terry D. Golding ,  John H. Miller, Jr. ,  Jerry R. Meyer ,  Eric R. Youngdale ,  Filbert J. Bartoli ,  Craig A. Hoffman

IPC分类号： G02F1/35 ,  H01L31/0352 ,  H01L31/10

CPC分类号： B82Y20/00 ,  G02F1/3511 ,  H01L31/035236 ,  G02F2203/023

摘要： The present invention relates to novel optical devices operating in the infrared, based on indirect narrow-gap superlattices (INGS) as the active optical materials. The novel optical devices include (1) wideband all-optical switches, which combine small insertion loss at low light intensities with efficient optical switching and optical limiting at high intensities, and (2) wideband infrared detectors with high collection efficiency and low tunneling noise currents, suitable for use in longwave infrared focal plane arrays. INGS comprise multiple semimetal/semiconductor layers having compatible crystal symmetry across each heterojunction between a given semimetal and the adjoining semiconductor, wherein each semimetal layer sandwiched between semiconductor layers is grown thin enough that each semimetal layer becomes a semiconductor, and wherein each semiconductor layer is thin enough that there is coupling between adjacent semiconductor layers. The present invention utilizes INGS, which are fabricated to meet the criteria E.sub.g.sup.ind

摘要翻译： 本发明涉及基于间接窄间隔超晶格（INGS）作为有源光学材料的以红外线工作的新型光学器件。 新型光学器件包括（1）宽带全光开关，其在低光强度下具有小的插入损耗，具有高效的光开关和高强度的光限制，以及（2）具有高采集效率和低隧道噪声电流的宽带红外检测器 适用于长波红外焦平面阵列。 INGS包括在给定半金属和相邻半导体之间的每个异质结上具有相容的晶体对称性的多个半金属/半导体层，其中夹在半导体层之间的每个半金属层生长得足够薄，使得每个半金属层变成半导体，并且其中每个半导体层是薄的 足以使相邻半导体层之间存在耦合。 本发明使用INGS，其被制造成满足Egind

公开(公告)号：US4558923A

公开(公告)日：1985-12-17

申请号：US564623

申请日：1983-12-22

申请人： Craig A. Hoffman ,  Jerry R. Meyer ,  Filbert Bartoli

发明人： Craig A. Hoffman ,  Jerry R. Meyer ,  Filbert Bartoli

IPC分类号： G02F1/21 ,  G02F1/35 ,  G02F3/02 ,  G02F1/015

CPC分类号： G02F1/3526 ,  G02F1/218 ,  G02F3/024

摘要： A bistable optical switch comprising a Fabry-Perot resonator containing a nonlinear semiconductor medium with a desired band structure and whose susceptibility (refractive index) varies with optical energy density. The Fabry-Perot resonator is biased to a point where two stable transmission states are possible. Switching is accomplished by pumping the nonlinear material with an energy hw in the range 1/2.DELTA..sub.g

摘要翻译： 一种双稳态光开关，其包含法布里 - 珀罗谐振器，其包含具有期望的带结构的非线性半导体介质，并且其灵敏度（折射率）随光能密度而变化。 法布里 - 珀罗谐振器被偏置到两个稳定的透射状态是可能的。 通过以1/2 DELTA g