发明申请
- 专利标题: METHOD OF PRODUCING SEMICONDUCTOR TRANSISTOR
- 专利标题(中): 生产半导体晶体管的方法
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申请号: US13582239申请日: 2011-03-02
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公开(公告)号: US20130052816A1公开(公告)日: 2013-02-28
- 发明人: Hiroshi Kambayashi , Akinobu Teramoto , Tadahiro Ohmi
- 申请人: Hiroshi Kambayashi , Akinobu Teramoto , Tadahiro Ohmi
- 申请人地址: JP Sendai-shi, Miyagi JP Yokohama-shi, Kanagawa
- 专利权人: TOHOKU UNIVERISTY,ADVANCED POWER DEVICE RESEARCH ASSOCIATION
- 当前专利权人: TOHOKU UNIVERISTY,ADVANCED POWER DEVICE RESEARCH ASSOCIATION
- 当前专利权人地址: JP Sendai-shi, Miyagi JP Yokohama-shi, Kanagawa
- 优先权: JP2010-045548 20100302
- 国际申请: PCT/JP2011/054814 WO 20110302
- 主分类号: H01L21/28
- IPC分类号: H01L21/28
摘要:
A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.
公开/授权文献
- US08906796B2 Method of producing semiconductor transistor 公开/授权日:2014-12-09